Charged Semiconductor Defects

Author:   Edmund G Seebauer ,  Meredith C Kratzer
Publisher:   Springer
ISBN:  

9781848820616


Pages:   312
Publication Date:   12 May 2009
Format:   Undefined
Availability:   Out of stock   Availability explained


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Charged Semiconductor Defects


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Overview

Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of defect engineering. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Defects in Semiconductors details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.

Full Product Details

Author:   Edmund G Seebauer ,  Meredith C Kratzer
Publisher:   Springer
Imprint:   Springer
Dimensions:   Width: 23.40cm , Height: 1.70cm , Length: 15.60cm
Weight:   0.440kg
ISBN:  

9781848820616


ISBN 10:   1848820615
Pages:   312
Publication Date:   12 May 2009
Audience:   General/trade ,  General
Format:   Undefined
Publisher's Status:   Unknown
Availability:   Out of stock   Availability explained

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