Free Delivery Over $100
|
|
|||
|
||||
OverviewFull Product DetailsAuthor: Cheol Seong HwangPublisher: Springer-Verlag New York Inc. Imprint: Springer-Verlag New York Inc. Edition: Softcover reprint of the original 1st ed. 2014 Dimensions: Width: 15.50cm , Height: 1.50cm , Length: 23.50cm Weight: 4.219kg ISBN: 9781489979438ISBN 10: 1489979433 Pages: 263 Publication Date: 23 August 2016 Audience: Professional and scholarly , Professional & Vocational Format: Paperback Publisher's Status: Active Availability: Manufactured on demand  We will order this item for you from a manufactured on demand supplier. Table of ContentsIntroduction.- Precursors and reaction mechanisms.- ALD simulations.- ALD for mass-production memories (DRAM and Flash).- ALD for emerging memories.- PcRAM.- FeRAM.- Front end of the line process.- Back end of the line.- ALD machines.ReviewsAuthor InformationCheol Seong Hwang received M.S. and Ph.D. degrees from Seoul National University, Seoul, Korea, in 1989 and 1993, respectively. In 1993, he joined the Material Science and Engineering Laboratory at the National Institutes of Standards and Technology, Gaithersburg, MD, as a Postdoctoral Research Fellow. He then joined Samsung Electronics Company, Ltd., as a Senior Researcher in 1994. In 1998, Dr. Hwang became a professor in the department of material science and engineering at Seoul National University. He has authored or coauthored more than 380 papers in international peer-reviewed scientific journals, which have been cited more than 7,500 times.Dr. Hwang was a recipient of the Alexander von Humboldt Fellowship Award, the 7th Presidential Young Scientist Award of the Korean government, and Faculty Excellent Award of Air Products, USA. Tab Content 6Author Website:Countries AvailableAll regions |
||||
