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OverviewThe Swift Heavy Ion irradiation induced surface nanostructuring and modifications of semiconducting materials and its devices are of significances both from fundamental as well as applied aspects and have not been either studied in details or related effects are yet to be fully understood.It has a direct relevance to simulate the degradation effects of electronic devices in space and in high radiation environment. The swift heavy ion in MeV range penetrates the semiconducting substrate quite deep in the bulk and hence a deep buried implantation layer can be worked out by swift heavy ion irradiation. Preset study is an attempt to understand these effects in much better way. The Effect of swift heavy ions on Semiconductor surfaces (Si & GaAs) and Metal /Semiconductor devices on gallium arsenide have been studied by Atomic Force Microscopy for surface morphology, Current-Voltage and Capacitance-Voltage studies for defects states and X-ray Photo electron Spectroscopy for chemical changes and elemental analysis at the device interface and Scanning Electron Microscopy with Energy Dispersive x-ray for the quantitative elemental analysis of the irradiated surfaces. Full Product DetailsAuthor: Om Prakash Sinha , P C SrivastavaPublisher: LAP Lambert Academic Publishing Imprint: LAP Lambert Academic Publishing Dimensions: Width: 15.20cm , Height: 1.30cm , Length: 22.90cm Weight: 0.340kg ISBN: 9783838383699ISBN 10: 3838383699 Pages: 228 Publication Date: 05 August 2010 Audience: General/trade , General Format: Paperback Publisher's Status: Active Availability: In Print This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of ContentsReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |