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OverviewGaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. This book starts by presenting the similarities and differences between GaN and ZnO materials, as well as the assets and current limitations of nanowires for their use in optical devices, including feasibility and perspectives. It then focuses on the nucleation and growth mechanisms of ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices. Full Product DetailsAuthor: Vincent Consonni , Guy Feuillet , Robert BaptistPublisher: ISTE Ltd and John Wiley & Sons Inc Imprint: ISTE Ltd and John Wiley & Sons Inc Dimensions: Width: 16.30cm , Height: 2.80cm , Length: 24.10cm Weight: 0.735kg ISBN: 9781848215979ISBN 10: 1848215975 Pages: 352 Publication Date: 29 July 2014 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: Out of stock  The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available. Table of ContentsPreface xi Part 1 GaN and ZnO Nanowires: Low-Dimensionality Effects 1 Chapter 1 Quantum and Optical Confinement 3 Le Si Dang Chapter 2 Stress Relaxation in Nanowires with Heterostructures 25 Frank Glas Chapter 3 Surface-Related Optical Properties of GaN-Based Nanowires 59 Pierre Lefebvre Chapter 4 Surface Related Optical Properties of ZnO Nanowires 81 Tobias Voss and Jürgen Gutowski Chapter 5 Doping and Transport 99 Julien Pernot, Fabrice Donatini and Pierre Tchoulfian Chapter 6 Microstructure of Group III-N Nanowires 125 Achim Trampert, Xiang Kong, Esperanza Luna, Javier Grandal and Bernd Jenichen Part 2 Nucleation and Growth Mechanisms of GaN and ZnO Nanowires 157 Chapter 7 Ni Collector-Induced Growth of GaN Nanowire on C-Plane Sapphere by Plama-Assisted Molecular Beam Epitaxy 159 Caroline Chèze Chapter 8 Self-Induced Growth of GaN Nanowires by Molecular Beam Epitaxy 177 Vincent Consonni Chapter 9 Selective Area Growth of GaN Nanowires by Plama-Assisted Molecular Beam Epitaxy 215 Miguel A Sanchez-Garcia, steven Albert, Ana M. Bengoechea-Encabo, Francesca Barbagini and Enrique Calleja Chapter 10 Metal-Organic Vapor Phase Epitaxy Growth of GaN Nanorods 245 Joël Eymery Chapter 11 Metal-Organic Chemical Vaport Deposition Growth of ZnO Nanowires 265 Vincent Sallet Chapter 12 Pulsed-Laser Deposition of ZnO Nanowires 303 Christoph Peter Dietrich and Marius Grundmann Chapter 13 Preparation of ZnO Nanorods and Nanowires by Wet Chemistry 325 Thierry Pauporté List of Authors 379ReviewsAuthor InformationVincent Consonni is Associate Scientist at CNRS (French National Center for Research) in France. His research has focused on the physics of crystal growth and of condensed matter for micro- and nano-structures involving compound semiconductors such as CdTe, GaN, ZnO and SnO2. He is currently working on transparent conductive materials and ZnO nanowire-based solar cells. He has published approximately 30 articles in peer-reviewed journals. Guy Feuillet is Senior Scientist at CEA (French Atomic and Alternative Energy Commission), France. He has initiated and coordinated many internal programs (GaN nanostructures, X-ray detectors for medical imaging, solid state lighting) and R&D programs during his work at CEA. He is a permanent member of the scientific advisory board at CEA/LETI, and a member of the selection committee for the French National Agency for Research (ANR). He has published about 120 papers in peer-reviewed journals. Tab Content 6Author Website:Countries AvailableAll regions |
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