Overview

Minsk, Belarus was the site of the NATO ARW on Wide Band-Gap electronic Materials May 3 through 6,1994; 143 participants and observers from 15 countries met for the NATO Advanced Research Workshop on Wide Band-Gap Electronic Materials (NATO ARW). The meeting was marked by a remarkable free exchange between east and west on these topics by revealing technical achievements not widely known or available in the west because ofpast political climate or present economic realities in the Newly IndependentStates. The topics ranged from electron doping of diamond, n-type diamond, negative electron affinity ofdiamond, applications of aluminum nitride, doping ofboron nitride, wideband gap electronic applications, to nanophase diamond. Of the many high-lights during the scientific meetings, an energy sub band due to defects in the diamond lattice was described. These defects areresponsible for the light emission from a diamond Light Emitting Diode (LED) which was demonstrated at the NATO ARW. This diamond LED can emitred, green, and blue light. The potential for ""high tech"" nanostructure electronic devices such as quantum transistors was described which mightsome day revolutionize electronics. The prospectsofaluminum nitride for acusto devices,piezodevices, and electroluminescencedevices were discussed.

Full Product Details

Author:   Mark A. Prelas ,  Peter Gielisse ,  Galina Popovici ,  Boris V. Spitsyn
Publisher:   Springer
Imprint:   Springer
Edition:   Softcover reprint of the original 1st ed. 1995
Volume:   1
Dimensions:   Width: 16.00cm , Height: 2.80cm , Length: 24.00cm
Weight:   0.865kg
ISBN:  

9789401040785

ISBN 10:   9401040788
Pages:   531
Publication Date:   13 October 2012
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand  
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Table of Contents

Diamond.- Problems of n-type Diamond Doping. Forced Methods of Doping.- Diffusion of Boron, Hydrogen, Oxygen and Lithium in Single Crystalline and Polycrystalline Diamond. A Novel Method for the Determination of the State of an Impurity: Forced Diffusion of Boron in IA Type Natural Diamond.- Chemical Aspects of Diamond Doping.- Diamond Growth by Hot Carbon Filament Chemical Vapor Deposition.- Diamond Particles on Silicon Tips: Preparation, Structure, and Field-Emission Properties.- To the Question of the Diamond Nuclei’s Formation from the Gas Phase.- Electrically and Optically Active Impurities and Defects in Diamond.- Prediction of Diamond Film Thermal Conductivity.- Spectral Hole-Burning Study of the Defects Created by Neutron Irradiation in a Natural Diamond.- Calculations of Phosphorous Electronic Levels in Diamond.- Hydrogen Chemistry on Diamond Surface.- Surface and Bulk Conductivity of Hydrogen Treated Polycrystalline Diamond.- Positron Annihilation in Diamond Films.- ESR Study of Paramagnetic Defects in Free Standing Diamond Films.- Efficient Reduction of Nitride and Nitrate to Ammonia Using B-doped Diamond Electrodes.- Electronic and Sensing Properties of Diamond.- Diamond MIS Capacitors With Silicon Dioxide Dielectric.- Diamond Photovoltaics: Characterization of CVD Diamond Film-Based Heterostructure for Light to Electricity Conversion.- Laser Modes in Diamond.- Advanced Applications of Diamond Electronics.- Laser-assisted Chemical Etching of Diamond Films in Oxygen.- Ion Milling of Polycrystalline Diamond Films.- Amorphous and Diamond-Kike Carbon Films.- Doping of Diamond-Like Carbon Films.- Unhydrogenated DLC Films Obtained by Magnetron Sputtering.- Simulation of Diffusion in an Amorphous Structure.- Optical and Electrical Properities ofQuantum-dimentional Multilayer Structures Based on Carbon Films.- Thermal Stability and Structural Reactions at the Tantalum/a-C Interface Under Vacuum Annealing Conditions.- Extended and Localized Electronic States in Tetrahedral Carbon Films.- Optical Properties of Sputtering and Glow Discharge a-C:H Films.- Application of Amorphous Hydrogenated Carbon Coating to Semiconductor Radiation Detectors.- Other Wide Bandgap Semiconductors.- Device for Growing and Doping in the Growth Process of Thin AlN Films.- Peculiarities of Chemical Vapor Heteroepitaxy of Wide Band Gap III-V Nitrides.- The Peculiarities of Cubic Boron Nitride Formation Mechanism Using Hexa-Ammonicate Boron Hydride of Magnesium.- Investigation of Cubic Boron Nitride Crystallization Processes in the BN-Li3N-(H, N) System.- Epitaxial Growth of AlN by Plasma Source Molecular Beam Epitaxy.- Electronic Structure and Related Properties of Tetrahedrally Bonded Wide-Band-Gap Materials Containing Early Elements of the Periodic Table.- Ion Implantation into Wide Bandgap Semiconductors.- Thermodynamic Properties of Boron Nitride.- Electrical Conductivity of Ceramic Based on Different Boron Nitride Modifications.- Cathodoluminescent Investigation of External Factors Influence on Defective Cubic Boron Nitride Structure.- Macro and Micro Structural Factors in Thin Film Growth of III-V Compounds.- The Features of the Sintering Process Under High Pressure of Aluminum Nitride Ceramic with High Thermal Conductivity.- Reactive Ion Etching of Silicon Carbide with Fluorine Containing Plasmas.- 1.54-µm Photoluminescence from Er-Implanted AlN & GaN.- AES-SIMS Analitical System for Compositional Measurements of Wide Band Gap Semiconductors.- Positron Annihilation in Sintered Boron Nitride.- Wide Band Gap Electronic Devices.-Wide Band-gap Photovoltaics.- Considerations in Further Development of Aluminum Nitrides as a Material for Device Applications.- Theoretical Aspects of Aluminum Nitride and Diamond in View of Laser and Photovoltaic Action.- Oral Presentations.- Poster Presentations.- List of Participants.- Affiliations Key.- Author Index.- Key Word Index.

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