Free Delivery Over $100
|
|
|||
|
||||
OverviewSince scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies. Full Product DetailsAuthor: Michael FuldePublisher: Springer Imprint: Springer Edition: 2010 ed. Volume: 28 Dimensions: Width: 15.50cm , Height: 0.90cm , Length: 23.50cm Weight: 0.830kg ISBN: 9789048132799ISBN 10: 9048132797 Pages: 127 Publication Date: 23 November 2009 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: Out of print, replaced by POD  We will order this item for you from a manufatured on demand supplier. Table of ContentsAnalog Properties of Multi-Gate MOSFETs.- High-k Related Design Issues.- Multi-Gate Related Design Aspects.- Multi-Gate Tunneling FETs.- Conclusions and Outlook.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
||||
