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OverviewSince scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies. Full Product DetailsAuthor: Michael FuldePublisher: Springer Imprint: Springer Edition: 2010 ed. Volume: 28 Dimensions: Width: 15.50cm , Height: 0.70cm , Length: 23.50cm Weight: 0.454kg ISBN: 9789400730830ISBN 10: 9400730837 Pages: 127 Publication Date: 14 March 2012 Audience: Professional and scholarly , Professional & Vocational Format: Paperback Publisher's Status: Active Availability: Manufactured on demand  We will order this item for you from a manufactured on demand supplier. Table of ContentsAnalog Properties of Multi-Gate MOSFETs.- High-k Related Design Issues.- Multi-Gate Related Design Aspects.- Multi-Gate Tunneling FETs.- Conclusions and Outlook.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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