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Full Product Details

Author:   Sima Dimitrijev
Publisher:   Oxford University Press Inc
Imprint:   Oxford University Press Inc
Dimensions:   Width: 18.00cm , Height: 3.20cm , Length: 23.00cm
Weight:   1.176kg
ISBN:  

9780195131864

ISBN 10:   019513186
Pages:   592
Publication Date:   24 February 2000
Audience:   College/higher education ,  Undergraduate ,  Postgraduate, Research & Scholarly
Format:   Hardback
Publisher's Status:   Unknown
Availability:   Out of stock  

Table of Contents

Preface PART 1: THE FUNDAMENTALS 1. Resistors: Introduction to Semiconductors 1.1: The Basics: Resistor Structure and Drift Current 1.2: Insight Into Conducitivity Ingredients: Chemical-Bond Model 1.3: Making a Semiconductor Resistor: Lithography and Diffusion 1.4: Carrier Mobility 1.5: Energy-Band Model 2. Capacitors: Reverse-Biased P-N Junction and MOS Structure 2.1: Basic Applications 2.2: Reverse-Biased P-N Junction 2.3: C-V Dependence of the Reverse-Biased P-N Junction: Solving the Poisson Equation 2.4: SPICE Parameters and Their Measurement 2.5: Metal Oxide Semiconductor (MOS) Capacitor and Thermal Oxide 3. Diodes: Forward-Biased P-N Junction and Metal-Semiconductor Contact 3.1: Rectifying Diodes: Fundamental Effects and Models 3.2: SPICE Models and Parameters, Stored-Charge Capacitance, and Temperature Effects 3.3: Reference Diodes: Breakdown Phenomena 3.4: Schottky Diodes: Metal-Semiconductor Contact 4. Basics of Transistor Applications 4.1: Analog Circuits 4.2: Digital Circuits 5.: MOSFET 5.1: MOSFET Principles 5.2: MOSFET Technologies 5.3: MOSFET Modeling 5.4: SPICE Parameters and Parasitic Elements 6. BJT 6.1: BJT Principles 6.2: Bipolar IC Technologies 6.3: BJT Modeling 6.4: SPICE Parameters 6.5: Parasitic Elements Not Included in Device Models PART 2: ADVANCED TOPICS 7. Advanced and Specific IC Devices and Technologies 7.1: Deep Submicron MOSFET 7.2: Memory Devices 7.3: Silicon-on-Insulator (SOI) Technology 7.4: BICMOS Technology 8. Photonic Devices 8.1: Light-Emitting Diodes (LED): Carrier Recombination 8.2: Photodetectors and Solar Cells: External Carrier Generation 8.3: Lasers 9. Microwave FETs and Diodes 9.1: Gallium-Arsenide versus Silicon 9.2: JFET 9.3: MESFET 9.4: HEMT 9.5: Negative Resistance Diodes 10. Power Devices 10.1: Power Devices in Switch-Mode Power Circuits 10.2: Power Diodes 10.3: Power MOSFET 10.4: IGBT 10.5: Thyristor 11. Semiconductor Device Reliability 11.1: Basic Reliability Concepts 11.2: Failure Mechanisms 11.3: Reliability Screening 11.4: Reliability Measurement 12. Quantum Mechanics 12.1: Wave Function 12.2: Heisenberg Uncertainty Principle 12.3: Schr:odinger Equation Appendices A: Basic Integrated Circuit Concepts and Economics B: Crystal Lattices, Planes, and Directions C: Hall Effect and Summary of Kinetic Phenomena D: Summary of Equations and Key Points E: Contents of Computer Exercises Manual List of Selected Symbols Bibliography Answers to Selected Problems Index

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