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OverviewUltra-Low Voltage Nano-Scale Memories provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically covered in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve problems with internal power-supply managements are extensively discussed. This authoritative monograph addresses these design challenges for memory and circuit engineers as well as for researchers and students who are interested in ultra-low voltage nano-scale memory LSIs. Full Product DetailsAuthor: Kiyoo Itoh , Masashi Horiguchi , Hitoshi TanakaPublisher: Springer-Verlag New York Inc. Imprint: Springer-Verlag New York Inc. Dimensions: Width: 15.50cm , Height: 2.00cm , Length: 23.50cm Weight: 0.705kg ISBN: 9780387333984ISBN 10: 0387333983 Pages: 346 Publication Date: 22 August 2007 Audience: College/higher education , Undergraduate Format: Hardback Publisher's Status: Active Availability: In Print  This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of ContentsAn Introduction to LSI Design.- Ultra-Low Voltage Nano-Scale DRAM Cells.- Ultra-Low Voltage Nano-Scale SRAM Cells.- Leakage Reduction for Logic Circuits in RAMs.- Variability Issue in the Nanometer Era.- Reference Voltage Generators.- Voltage Down-Converters.- Voltage Up-Converters and Negative Voltage Generators.- High-Voltage Tolerant Circuits.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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