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OverviewThis book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. Full Product DetailsAuthor: Lining Zhang , Mansun ChanPublisher: Springer International Publishing AG Imprint: Springer International Publishing AG Edition: Softcover reprint of the original 1st ed. 2016 Dimensions: Width: 15.50cm , Height: 1.20cm , Length: 23.50cm Weight: 0.454kg ISBN: 9783319810874ISBN 10: 3319810871 Pages: 213 Publication Date: 22 April 2018 Audience: Professional and scholarly , Professional & Vocational Format: Paperback Publisher's Status: Active Availability: Manufactured on demand  We will order this item for you from a manufactured on demand supplier. Table of ContentsSteep Slope Devices and TFETs.- Tunnel-FET Fabrication and Characterization.- Compact Models of TFETs.- Challenges and Designs of TFET for Digital Applications.- Atomistic Simulations of Tunneling FETs.- Quantum Transport Simulation of III-V TFETs with Reduced-Order k ·p Method.- Carbon Nanotube TFETs: Structure Optimization with Numerical Simulation.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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