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OverviewThis book discusses the theory of the electron states of transition metal impurities in semiconductors in connection with the general theory of isoelectronic impurities. It contains brief descriptions of the experimental data available for transition metal impurities belonging to iron, palladium and platinum groups and for rare-earth impurities in elemental semiconductors (III IV, II VI and IV VI compounds) and in several oxide compounds (TiO2, BaTiO3, SrTiO3). Also included are applications of the theory to the optical, electrical and resonance properties of semiconductors doped by the transition metal impurities.The book presents a theory unifying previously proposed ligand-field and band descriptions of transition metal impurities. It describes the theory in the context of the general theory of neutral impurities in semiconductors and demonstrates the capabilities of this description to explain the basic experimental properties of semiconductors doped by transition metal impurities. A detailed discussion of various experimental results and their theoretical interpretation is carried out.This book comprises three parts. The first two parts consider several exactly solvable models and describe numerical techniques. All the models and simulations constitute a general pattern describing transition metal and rare-earth impurities in semiconductors. The final part uses this theory in order to address various experimentally observed properties of these systems.Contents: Introduction to General Theory of Deep Levels: History of the ProblemExactly Solvable Models of Deep LevelsPrincipal Techniques of the Calculation of Deep LevelsChemical Trends for the Substitutional Impurities Theory of Deep Levels in Semiconductors Doped by Transition Metal Impurities: The Nature of Deep Levels Created by the d - and f -ImpuritiesStructure of the Chemical Bonds of the 3 d -Ions in Covalent SemiconductorsSingle Electron Theory of Deep d -LevelsMultielectron Theory of the Deep d -LevelsImpurity ExcitonsChemical Trends for the Deep d -Levels Physical Properties of the 3d-Ions in Semiconductors: Optical Properties of the Transition Metal ImpuritiesInteraction of d -Impurities with the LatticeExternal Influences on the Properties of the d -ImpuritiesImpurity Paramagnetism Pair Centres with Transition Metal ImpuritiesReadership: Condensed matter physicists and materials scientists. Full Product DetailsAuthor: K A Kikoin , Victor N Fleurov , V N FleurovPublisher: World Scientific Publishing Company Imprint: World Scientific Publishing Company ISBN: 9781299670129ISBN 10: 1299670121 Pages: 361 Publication Date: 01 January 1994 Audience: General/trade , General Format: Electronic book text Publisher's Status: Active Availability: In stock We have confirmation that this item is in stock with the supplier. It will be ordered in for you and dispatched immediately. Table of ContentsReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |