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OverviewThe editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas. Full Product DetailsAuthor: Wladyslaw Grabinski , Bart Nauwelaers , Dominique SchreursPublisher: Springer Imprint: Springer ISBN: 9786610625093ISBN 10: 6610625093 Pages: 298 Publication Date: 01 January 2006 Audience: General/trade , General Format: Electronic book text Publisher's Status: Active Availability: Out of stock  The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available. Table of ContentsReviewsA comprehensive book on state of the art emerging MOSFET models for the design and simulation of analog, digital or RF Integrated Circuits. <br>Narain Arora, Cadence Design Systems, California, USA <p> This book covers modern topics in semiconductor TCAD, circuit simulation, compact models, RF modeling, etc. which are hard to find together anywhere else. <br>Peter Bendix, Xpedion Design Systems, California, USA Author InformationTab Content 6Author Website:Countries AvailableAll regions |
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