Free Delivery Over $100
|
|
|||
|
||||
OverviewThis volume presents a research update of silicon and non-silicon transient processing techniques, such as rapid thermal process, laser processes, flash evaporation and jet processes. It also covers process sensors, equipment issues and the manufacturer's perspective. Coverage includes: modelling, measurement and control of rapid thermal processing, rapid thermal annealing, issues in silicon processing, transient thermal processing in III-V semiconductor technology, multi-wavelength imaging pyrometer for non-contact temperature monitoring, real-time implementation of an adaptive control system for a three-zone RTP state. Full Product DetailsAuthor: N.M. Ravindra , R. K. SinghPublisher: The Minerals, Metals & Materials Society Imprint: The Minerals, Metals & Materials Society Edition: illustrated edition ISBN: 9780873393317ISBN 10: 0873393317 Pages: 179 Publication Date: 01 October 1998 Audience: College/higher education , Professional and scholarly , Postgraduate, Research & Scholarly , Professional & Vocational Format: Paperback Publisher's Status: Active Availability: In Print  This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of ContentsPart 1 Silicon-related processes: modelling, measurement and control of rapid thermal processing, K.C. Saraswat et al; rapid thermal chemical vapour deposition of silicon-based heterostructures, J.C. Sturm et al; using photonic effects in optical processing for silicon device fabrication, B.L. Sopori; in-situ analysis of the formation of thin silicide contacts (<50 NM) in submicro CMOS structures, L.A. Clevenger et al; selective silicon epitaxy by ultra-high vacuum rapid thermal chemical vapour deposition using disilane, hydrogen and chlorine, K. Christensen et al; applications of RTP in metallization for silicon device technology, O. Gokce and N.M. Ravindra. Part 2 Silicon related processes: effect of nitrogen ambient on C49 to C54 titanium disilicide phase transformation kinetics, R.V. Nagabushnam et al; rapid electrical characterization of oxides and nitrided oxides grown in a single-wafer reactor, I. Sagnes et al; selective rapid thermal chemical vapour deposition of TiSi2, M.C. Ztrk et al; rapid thermal annealing issues in silicon processing, R.B. Fair; role of excess carriers on dopant diffusion in implanted silicon during rapid Th annealing, R.V. Nagabushnam et al; electronic and optical properties of Si-Al contacts produced by optical excitation, M. Cudzinovic and B.L. Sopori. Part 3 Non-silicon processes: transient thermal processing of refractory silicides for the GaAs device technology, T. Feng et al; transient thermal processing in III-V semiconductor technology, S.J. Pearton et al; influence of temperature on the distribution of oxygen in Ge grown on GaAs, M. Dubey et al; effect of rapid thermal anneal on the electrical properties of polycrystalline D, E-K. Souw et al; processing of high-temperature stable contacts to single-crystal diamond, P. Gluche et al; rapid thermal processing of magnetic alloys, J. Viatella and R.K. Singh. Part 3 Process sensors, equipment issues and manufacturing perspective. (Part contents)ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
||||
