Overview

This is a compilation of current research and development in very important ferroelectric device technologies, namely ferroelectrics for dynamic random access memories (DRAMs) and non-volatile ferroelectric random access memories (NV-FRAMs). Given the rapid pace of development and the broad scope of the general topic of ferroelectric materials, readers will benefit from such a focused presentation. The primary focus of the book is to expound the materials and device aspects of these technologies. All the chapters have been written by leaders in their fields. Therefore, each chapter provides a comprehensive treatment of a specific topic of relevance to these two technologies.

Full Product Details

Author:   R. Ramesh
Publisher:   Springer
Imprint:   Springer
Edition:   1997 ed.
Volume:   3
Dimensions:   Width: 15.50cm , Height: 1.50cm , Length: 23.50cm
Weight:   1.220kg
ISBN:  

9780792399933

ISBN 10:   0792399935
Pages:   249
Publication Date:   30 September 1997
Audience:   College/higher education ,  Professional and scholarly ,  Undergraduate ,  Postgraduate, Research & Scholarly
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print  
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Table of Contents

1: (Ba,Sr)TiO3 Thin Films for Dram’s.- 2: (Ba,Sr)TiO3 Films and Process Integration For DRAM Capacitor.- 3: Elastic Domains in Ferroelectric Epitaxial Films.- 4: Study of Growth Processes in Ferroelectric Films and LayeredHeterostructures via In Situ, Real-Time Ion Beam Analysis.- 5: Layered Perovskite Thin Films and Memory Devices.- 6: Pb(Zr,Ti)O3 Based Thin Film Ferroelectric Nonvolatile Memories.- 7: Chemical Vapor Deposition of Ferroelectric Thin Films.- 8: Degradation Mechanisms and Reliability Issues for Ferroelectric Thin Films.- 9: Low Voltage Performance in Lead Based Ferroelectric Thin Film Memory Elements With (La,Sr)CoO3 Electrodes.

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