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OverviewThermal Management of Gallium Nitride Electronics outlines the technical approaches undertaken by leaders in the community, the challenges they have faced, and the resulting advances in the field. This book serves as a one-stop reference for compound semiconductor device researchers tasked with solving this engineering challenge for future material systems based on ultra-wide bandgap semiconductors. A number of perspectives are included, such as the growth methods of nanocrystalline diamond, the materials integration of polycrystalline diamond through wafer bonding, and the new physics of thermal transport across heterogeneous interfaces. Over the past 10 years, the book's authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, thus resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. This book chronicles those breakthroughs. Full Product DetailsAuthor: Marko Tadjer (Electronics Engineer, Naval Research Laboratory, Washington DC, USA) , Travis Anderson (Senior Chemical Engineer, Naval Research Laboratory, Washington DC, USA)Publisher: Elsevier Science Publishing Co Inc Imprint: Woodhead Publishing Weight: 0.720kg ISBN: 9780128210840ISBN 10: 0128210842 Pages: 560 Publication Date: 15 July 2022 Audience: Professional and scholarly , Professional & Vocational Format: Paperback Publisher's Status: Active Availability: Manufactured on demand  We will order this item for you from a manufactured on demand supplier. Table of Contents1. Heating issues in wide-bandgap semiconductor devices 2. First principles thermal transport in GaN and related materials 3. Heat transport in polycrystalline diamond from the meso to the nano scale 4. Understanding Thermal Transport across Interfaces 5. Upper limits to thermal conductance across gallium nitride interfaces: predictions and measurements 6. AlGaN/GaN HEMT Device Physics and Electro-Thermal Modeling 7. Modeling of thermal phenomena in GaN devices 8. Device-level modeling and simulation of AlGaN/GaN HEMTs 9. Gate Resistance Thermometry: an electrical thermal characterization technique 10. Thermal characteristics of superlattice castellated FETs 11. The transient Thermoreflectance Approach for high-resolution temperature mapping of GaN devices 12. Fundamentals of CTE-matched QST substrate technology 13. Reduced-Stress Nanocrystalline Diamond for Heat Spreading in Electronic Devices 14. GaN-on-diamond materials and device technology: a review 15. Three-Dimensional Integration of Diamond and GaN 16. Room-Temperature Bonded Thermally Conductive Semiconductor Interfaces 17. Direct low-temperature bonding of AlGaN/GaN thin film devices onto diamond substrates 18. Microfluidic cooling for GaN electronic devices 19. Thermal Effects in Ga2O3 Rectifiers and MOSFETs-Borrowing from GaNReviewsAuthor InformationDr. Marko J. Tadjer is a civilian staff scientist at the U.S. Naval Research Laboratory, Washington DC. He received a Ph.D. in Electrical Engineering from the University of Maryland, College Park in 2010, a Master of Science in Electrical Engineering from Duke University in 2004, and undergraduate degrees in Electrical and Computer Engineering from the University of Arkansas in 2002. His research in power devices focuses on the integration of materials with attractive properties such as diamond with more mature GaN and SiC technology, as well as exploring novel oxides such as Ga2O3 for power electronics applications. Travis J. Anderson is a civilian staff scientist at the U.S. Naval Research Laboratory. He received a Ph.D. in Chemical Engineering from the University of Florida in 2008, and a B.S. in Chemical Engineering from the Georgia Institute of Technology in 2004. Tab Content 6Author Website:Countries AvailableAll regions |
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