Free Delivery Over $100
|
|
|||
|
||||
OverviewThis volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation. Full Product DetailsAuthor: Mitiko Miura-Mattausch , Hans Jurgen Mattausch , Tatsuya EzakiPublisher: World Scientific Publishing Company Imprint: World Scientific Publishing Company ISBN: 9786611960896ISBN 10: 6611960899 Publication Date: 03 June 2008 Audience: General/trade , General Format: Electronic book text Publisher's Status: Active Availability: Out of stock  The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available. Table of ContentsReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
||||
