The Drift Diffusion Equation and Its Applications in MOSFET Modeling

Author:   Wilfried Hänsch
Publisher:   Springer Verlag GmbH
Edition:   Softcover reprint of the original 1st ed. 1991
ISBN:  

9783709190975


Pages:   271
Publication Date:   30 December 2011
Format:   Paperback
Availability:   Manufactured on demand   Availability explained
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The Drift Diffusion Equation and Its Applications in MOSFET Modeling


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Author:   Wilfried Hänsch
Publisher:   Springer Verlag GmbH
Imprint:   Springer Verlag GmbH
Edition:   Softcover reprint of the original 1st ed. 1991
Dimensions:   Width: 17.00cm , Height: 1.50cm , Length: 24.40cm
Weight:   0.502kg
ISBN:  

9783709190975


ISBN 10:   3709190975
Pages:   271
Publication Date:   30 December 2011
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand   Availability explained
We will order this item for you from a manufactured on demand supplier.

Table of Contents

1 Boltzmann’s Equation.- 1.1 Introduction.- 1.2 Many-Body System in Equilibrium.- 1.3 Non-Equilibrium Green’s Functions.- References.- 2 Hydrodynamic Model.- 2.1 Introduction.- 2.2 Linear Response and Relaxation-Time Approximation.- 2.3 Nonlinear Response and the Moment Method.- 2.4 Summary.- References.- 3 Carrier Transport in an Inversion Channel.- 3.1 Introduction.- 3.2 The Classical Limit ? ? 0.- 3.3 Surface Mobility.- References.- 4 High Energetic Carriers.- 4.1 Introduction.- 4.2 Impact Ionization Scattering Strength.- 4.3 Distribution Function.- 4.4 Impact Ionization Coefficient and Gate Oxide Injection.- References.- 5 Degredation.- 5.1 Introduction.- 5.2 Analyzing a Degraded MOSFET.- 5.3 The Degradation Process.- References.- Appendix 1. Perturbation Theory and Diagram Technique.- Appendix 2. Inversion Channel Particle-Density Distribution in Equilibrium.- Author Index.

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