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OverviewFull Product DetailsAuthor: G.A. Armstrong (Professor of Electronic Engineering, Queen's University Belfast, School of Electrical and Electronic Engineering, UK) , C.K. Maiti (Professor in Electronics, Indian Institute of Technology, Kharagpur, India)Publisher: Institution of Engineering and Technology Imprint: Institution of Engineering and Technology Dimensions: Width: 15.60cm , Height: 2.50cm , Length: 23.40cm ISBN: 9780863417436ISBN 10: 0863417434 Pages: 456 Publication Date: 30 November 2007 Audience: College/higher education , Professional and scholarly , Tertiary & Higher Education , Professional & Vocational Format: Paperback Publisher's Status: Active Availability: In Print  This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of ContentsChapter 1: Introduction Chapter 2: Technology and TCAD tools Chapter 3: Diffusion and oxidation of SiGe/SiGeC films Chapter 4: Strain-engineered MOSFETs Chapter 5: SOI MOSFETs Chapter 6: Heterostructure bipolar transistors Chapter 7: SiGe/SiGeC HBT technology Chapter 8: MOSFET: compact models Chapter 9: HBT: compact models Chapter 10: Design and simulation of high-speed devices Chapter 11: Passive componentsReviewsAuthor InformationAlastair Armstrong is Professor of Electronic Engineering in the School of Electrical and Electronic Engineering, Queen's University Belfast. He has 30 years experience in simulation and design of semiconductor devices and circuits, and has published more than 130 journal and conference papers on related topics. His most recent publications cover the modelling of different semiconductor technologies including bipolar, MOS and silicon on insulator. Over the course of his career Armstrong has acted as a consultant to several international companies. He has been awarded twelve major research grants; many as principal investigator. He is a member of the Northern Ireland Semiconductor Research Centre, currently actively researching the modelling of novel types of multiple gate MOS transistor structures for nanotechnology. Chinmay K. Maiti is a Professor in Electronics at the Indian Institute of Technology, Kharagpur, India. He is a member of the microelectronics research group within the Department of Electronics and Electrical Communication Engineering. His current research interests cover different aspects of semiconductor process and device simulation, with particular emphasis on SiGe and SiGeC heterojunction bipolar transistors, SiGe channel and strained-Si channel MOSFETs involving ultra-thin gate oxides, including high-k gate dielectrics. Maiti has authored or co-authored more than 150 technical papers and conference publications in relevant areas and is a Senior Member of the IEEE. Tab Content 6Author Website:Countries AvailableAll regions |
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