Tantalum and Niobium-Based Capacitors: Science, Technology, and Applications

Author:   Yuri Freeman
Publisher:   Springer International Publishing AG
Edition:   Softcover reprint of the original 1st ed. 2018
ISBN:  

9783319885001


Pages:   120
Publication Date:   29 August 2018
Format:   Paperback
Availability:   Manufactured on demand   Availability explained
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Tantalum and Niobium-Based Capacitors: Science, Technology, and Applications


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Overview

This book provides a comprehensive analysis of the science, technology, and applications of Tantalum and Niobium-based capacitors. The author discusses fundamentals, focusing on thermodynamic stability, major degradation processes and conduction mechanisms in the basic structure of Me-Me2O5-cathode (Me: Ta, Nb). Technology-related coverage includes chapters technology chapters on the major manufacturing steps from capacitor grade powder to the testing of finished capacitors. Applications discussed include high reliability, high charge and energy efficiency, high working voltages, high temperatures, etc. The links between the scientific foundation, breakthrough technologies and outstanding performance and reliability of the capacitors are demonstrated.  The theoretical models discussed include the thermodynamics of the amorphous dielectrics, conduction mechanisms in metal-insulator-semiconductor (MIS) structures, band diagrams of the organic semiconductors, etc.

Full Product Details

Author:   Yuri Freeman
Publisher:   Springer International Publishing AG
Imprint:   Springer International Publishing AG
Edition:   Softcover reprint of the original 1st ed. 2018
Weight:   0.454kg
ISBN:  

9783319885001


ISBN 10:   3319885006
Pages:   120
Publication Date:   29 August 2018
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand   Availability explained
We will order this item for you from a manufactured on demand supplier.

Table of Contents

Introduction.- Chap1:  Major Degradation Mechanisms.- Chap2: Basic Technology.- Chap3: Applications.- Conclusion.

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Author Information

Yuri P. Freeman is director of advanced research in the Tantalum (Ta) business unit and a member of the Advance Technology Group (ATG) at KEMET Electronics.  The ATG is responsible for KEMET’s technical strategy, which includes cooperation with Universities on fundamental issues in passive electronic components. Yuri P. Freeman received his Ph.D. in physics of the solid state from Kharkov Technical University (KhTU) in Ukraine. Prior to KEMET, he worked as principal scientist at Elitan, the largest producer in the Soviet Union of Ta and Niobium (Nb) capacitors, and at Vishay Sprague in the USA. Simultaneously with working in industry, he taught “Physics of Electronic Components” in the KhTU and now in the Clemson University in the USA. Yuri P. Freeman has published more than 30 papers and received 26 patents in the field of physics and technology of Ta and Nb-based capacitors.

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