Overview

Full Product Details

Author:   Ashish Raman (Dr B R Ambedkar Nat. Ins. of Tech, India.) ,  Deep Shekhar (Dr B R Ambedkar Nat. Ins. of Tech, India.) ,  Naveen Kumar (Dr B R Ambedkar Nat. Ins. of Tech, India.)
Publisher:   Taylor & Francis Ltd
Imprint:   CRC Press
Weight:   0.852kg
ISBN:  

9780367648091

ISBN 10:   0367648091
Pages:   392
Publication Date:   11 May 2022
Audience:   College/higher education ,  Professional and scholarly ,  Tertiary & Higher Education ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print  
This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us.

Table of Contents

Chapter 1 Fundamental Phenomena in Nanoscale Semiconductor Devices Zeinab Ramezani and Arash Ahmadivand Chapter 2 Recent Advancements in Growth and Stability of Phosphorene: Prospects for High-Performance Devices Sushil Kumar Pandey, Vivek Garg, Nezhueyotl Izquierdo, and Amitesh Kumar Chapter 3 Study of Transition Metal Dichalcogenides in Junctionless Transistors and Effect of Variation in Dielectric Oxide Prateek Kumar, Maneesha Gupta, Kunwar Singh, and Ashok Kumar Gupta Chapter 4 GNRFET-Based Ternary Repeaters: Prospects and Potential Implementation for Efficient GNR Interconnects Afreen Khursheed and Kavita Khare Chapter 5 An Effective Study on Particulate Matter (PM) Removal Using Graphene Filter Katyayani Bhardwaj, Aryan, and R.K. Yadav Chapter 6 Recent Trends in Fabrication of Graphene-Based Devices for Detection of Heavy Metal Ions in Water Avik Sett, Monojit Mondal, Santanab Majumder, and Tarun Kanti Bhattacharyya Chapter 7 Vertical Tunnel FET Having Dual MOSCAP Geometry Vandana Devi Wangkheirakpam, Brinda Bhowmick, and Puspa Devi Pukhrambam Chapter 8 Leakage Current and Capacitance Reduction in CMOS Technology Ajay Somkuwar and Laxmi Singh Chapter 9 Design of Gate-All-Around TFET with Gate-On-Source for Enhanced Analog Performance Navaneet Kumar Singh, Rajib Kar, and Durbadal Mandal Chapter 10 Solving Schrodinger’s Equation for Low-Dimensional Nanostructures for Understanding Quantum Confinement Effects Amit Kumar Chapter 11 Simulation of Reconfigurable FET Circuits Using Sentaurus TCAD Tool Remya Jayachandran, Rama S. Komaragiri, and K. J. Dhanaraj Chapter 12 NEGF Method for Design and Simulation Analysis of Nanoscale MOS Devices Chhaya Verma and Jeetendra Singh Chapter 13 Performance Investigation of a Novel Si/Ge Heterojunction Asymmetric Double-Gate DLTFET for Low-Power Analog/RF and IoT Applications Suruchi Sharma, Rikmantra Basu, and Baljit Kaur Chapter 14 Synthesis of Graphene Nanocomposites Toward the Enhancement of Energy Storage Performance for Supercapacitors Monojit Mondal, Avik Sett, Dipak Kumar Goswami, and Tarun Kanti Bhattacharyya Chapter 15 Design and Analysis of Dopingless Charge-Plasma-Based Ring Architecture of Tunnel Field-Effect Transistor for Low-Power Application Ashok Kumar Gupta, Ashish Raman, Naveen Kumar, Deep Shekhar, and Prateek Kumar Chapter 16 Hybrid Intelligent Technique-Based Doping Profile Optimization in a Double-Gate Hetero-Dielectric TFET Sagarika Choudhury, Krishna Lal Baishnab, Brinda Bhowmick, and Koushik Guha Chapter 17 Graphene Nanoribbon Devices: Advances in Fabrication and Applications Juan M. Marmolejo-Tejada, Jaime Velasco-Medina, and Andres Jaramillo-Botero Chapter 18 Design and Analysis of Various Neural Preamplifier Circuits Swagata Devi, Koushik Guha, and Krishna Lal Baishnab Chapter 19 Design and Analysis of Transition Metal Dichalcogenide-Based Feedback Transistor Prateek Kumar, Maneesha Gupta, Kunwar Singh, Ashok Kumar Gupta, and Naveen Kumar Chapter 20 Reduced Graphene-Metal Phthalocyanine-Based Nanohybrids for Gas-Sensing Applications Aman Mahajan and Manreet Kaur Sohal Chapter 21 Phosphorene Multigate Field-Effect Transistors for High-Frequency Applications Ramesh Rathinam, Adhithan Pon, and Arkaprava Bhattacharyya Chapter 22 Analytical Modeling of Reconfigurable TransistorsRanjith Rajan, Suja Krishnan Jagada, and Rama S. Komaragiri Chapter 23 Flexi-Grid Technology: A Necessity for Spectral Resource Utilization Divya Sharma, Shivam Singh, Anurag Upadhyay, and Sofyan A. Taya

Reviews

Author Information

Ashish Raman is presently working as Assistant Professor at Dr. B. R. Ambedkar National Institute of Technology. He is working as Principal investigator and member of various funded projects, funded by Science and Engineering Reaearch Board (SERB), Minestry of Electroncis and IT (MeitY), FIST, ISRO and many more projects. Deep Shekhar is associated as faculty in the Department of Electronics and Communication Engineering at National Institute of Technology, Jalandhar since 2016. He has expertise in solid state Devices, Anlog CMOS integrated Circuits, Nano scale Device design and simulation etc. Naveen Kumar is currently working as Research Associate at University of Glasgow, Scotland. His main areas of research interest are Semiconductor Device Physics, MEMS/NEMS, Spintronics, etc.

Tab Content 6

Author Website:  

Customer Reviews

Recent Reviews

No review item found!

Add your own review!

Countries Available

All regions