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OverviewIn recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques have given rise to a new area of research of bandgap engineering in silicon based materials. This development has paved the way for heterojunction bipolar and field effect transistors, as well as for novel quantum devices. This title provides a comprehensive introduction to silicon heterostructures, including growth and characterization of materials and descriptions of new heterostructure devices, making it a useful reference for postgraduate students, researchers and scientists. Full Product DetailsAuthor: C.K. Maiti (Professor, Indian Institute of Technology, Kharagpur, India) , N.B. Chakrabarti (Indian Institute of Technology, Kharagpur, India) , S.K. Ray (Associate Professor, Indian Institute of Technology, Kharagpur, India)Publisher: Institution of Engineering and Technology Imprint: Institution of Engineering and Technology Volume: No.12 ISBN: 9780852967782ISBN 10: 0852967780 Pages: 508 Publication Date: 28 February 2001 Audience: College/higher education , Professional and scholarly , General/trade , Tertiary & Higher Education , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: In Print  This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of ContentsChapter 1: Introduction Chapter 2: Strained Layer Epitaxy Chapter 3: Electronic Properties of Alloy Layers Chapter 4: Gate Dielectrics on Strained Layers Chapter 5: SiGe Heterojunction Bipolar Transistors Chapter 6: Heterostructure Field Effect Transistors Chapter 7: BICFET, RTD and Other Devices Chapter 8: MODFETs Chapter 9: Contact Metallization on Strained Layers Chapter 10: Si/SiGe OptoelectronicsReviewsAuthor InformationDr Maiti received his M Tech degree in Radio Physics and Electronics from the University of Calcutta and MSc from the University of Technology, Loughborough. His PhD was awarded by the Indian Institute of Technology, Kharagpur in 1984 where he remained and currently is a Professor in the Department of Electronics. He currently leads the semiconductor device/process simulation research group. Dr Chakrabarti received his MSc(Tech) degree in Applied Physics and DSc from the University of Calcutta in 1974. He is now associated with the VLSI laboratory of the Indian Institute of Technology, Kharagpur after retiring as a Professor in the Department of Electronics. Dr Ray received his MSc degree from the University of Calcutta and his M Tech and PhD from the Indian Institute of Technology, Kharagpur in 1991. He is now an Associate Professor in the Physics department leading the semiconductor materials processing research group. Tab Content 6Author Website:Countries AvailableAll regions |
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