Strain-Engineered MOSFETs

Author:   C.K. Maiti ,  T.K. Maiti
Publisher:   Taylor & Francis Inc
ISBN:  

9781466500556


Pages:   320
Publication Date:   28 November 2012
Format:   Hardback
Availability:   In Print   Availability explained
This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us.

Our Price $273.00 Quantity:  
Add to Cart

Share |

Strain-Engineered MOSFETs


Add your own review!

Overview

Full Product Details

Author:   C.K. Maiti ,  T.K. Maiti
Publisher:   Taylor & Francis Inc
Imprint:   CRC Press Inc
Dimensions:   Width: 15.60cm , Height: 2.20cm , Length: 23.40cm
Weight:   0.598kg
ISBN:  

9781466500556


ISBN 10:   1466500557
Pages:   320
Publication Date:   28 November 2012
Audience:   College/higher education ,  Postgraduate, Research & Scholarly
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print   Availability explained
This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us.

Table of Contents

Introduction. Substrate-Induced Strain Engineering in CMOS Technology. Process-Induced Stress Engineering in CMOS Technology. Electronic Properties of Strain-Engineered Semiconductors. Strain-Engineered MOSFETs. Noise in Strain-Engineered Devices. Technology CAD of Strain-Engineered MOSFETs. Reliability and Degradation of Strain-Engineered MOSFETs. Process Compact Modelling of Strain-Engineered MOSFETs. Process-Aware Design of Strain-Engineered MOSFETs. Conclusions. Index.

Reviews

... an immensely useful book for the researcher in this field and even for some like me who do not work exactly in this area. Any scientist interested in strain modulation of device properties will value this book. -Supriyo Bandyopadhyay, Virginia Commonwealth University ... a timely bridge from the conventional MOSFETs to advanced strain-engineered MOSFETs to non-classical multiple gate devices to FinFETs. ... I strongly recommend this book. -Dr. Enrique MIRANDA, Universitat Autonoma de Barcelona


... an immensely useful book for the researcher in this field and even for some like me who do not work exactly in this area. Any scientist interested in strain modulation of device properties will value this book. -Supriyo Bandyopadhyay, Virginia Commonwealth University ... a timely bridge from the conventional MOSFETs to advanced strain-engineered MOSFETs to non-classical multiple gate devices to FinFETs. ... I strongly recommend this book. -Dr. Enrique MIRANDA, Universitat Autonoma de Barcelona


Author Information

C K Maiti (Author) , T K Maiti (Indian Institute of Technology, Kharagpur, India Indian Institute of Technology, Kharagpur Indian Institute of Technology, Kharagpur Indian Institute of Technology, Kharagpur Indian Institute of Technology, Kharagpur) (Author)

Tab Content 6

Author Website:  

Customer Reviews

Recent Reviews

No review item found!

Add your own review!

Countries Available

All regions
Latest Reading Guide

lgn

al

Shopping Cart
Your cart is empty
Shopping cart
Mailing List