Spin Transfer Torque Memory Devices from Materials to STT-RAM Applications

Author:   Yong Jiang ,  Xiaoguang Xu
Publisher:   Wiley-VCH Verlag GmbH
ISBN:  

9783527334544


Pages:   400
Publication Date:   07 January 2022
Format:   Hardback
Availability:   Not yet available   Availability explained
This item is yet to be released. You can pre-order this item and we will dispatch it to you upon its release.

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Spin Transfer Torque Memory Devices from Materials to STT-RAM Applications


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Overview

Integrating the distinct knowledge for the magnetism as well as the silicon manufacturing community, this book provides the knowledge needed by both, resulting in a much-needed overview of the characteristics of perpendicular magnetic films and the materials which can be used for spin transfer torque applications. As such, STT is explained in detail, as are magnetic random access memories (MRAM), while a chapter on recent progress in STT-RAM rounds off the book.

Full Product Details

Author:   Yong Jiang ,  Xiaoguang Xu
Publisher:   Wiley-VCH Verlag GmbH
Imprint:   Blackwell Verlag GmbH
ISBN:  

9783527334544


ISBN 10:   3527334548
Pages:   400
Publication Date:   07 January 2022
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   Not yet available   Availability explained
This item is yet to be released. You can pre-order this item and we will dispatch it to you upon its release.

Table of Contents

INTRODUCTION PERPENDICULAR MAGNETIC FILMS Magnetic Thin Films (Co/Pt)n and (Co/Ni)n Multilayers Rare-Earth/Transition-Metal Alloys L10-ordered CoPt (or FePt) Alloys HALF METALS Introduction Electronic Structure and Spin-Polarization Heat Treatment Application SPIN TRANSFER TORQUE Theoretic Prediction of STT STT in Current-Perpendicular-to-Plane Spin-Valve s(SPP-SPVs) STT in Magnetic Tunnelling Junctions (MTJs) Reduction of the Critical Current of STT MAGNETIC RANDOM ACCESS MEMORY MRAM and Spintronics Design and Fabrication Writing Technique Reading Technique Applications of MRAM RECENT PROGRESS IN STT-RAM Structure of STT-RAM Design and Fabrication STT Writing Process in STT-RAM Several Challenges

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Author Information

Yong Jiang is Professor for Materials Science at the University ofScience and Technology Beijing since 2004. He received his PhD fromthe Chinese Academy of Science in 2000 and worked afterwards asresearcher for the Information Storage Materials Laboratory at thenational University of Singapore. In 2002 he joined TohokuUniversity, Japan. His research is focused on spin electronics,including current-perpendicular-to-plane giant magnetoresistance,spin transfer torque and perpendicular magnetized thin films. Hehas published over 120 refereed journal papers and two bookchapters. He has been granted 10 patents, with another 10 patentspending. Xiaoguang Xu is Associate Professor at the University of Scienceand Technology in Beijing. After having received her PhD at JilinUniversity in 2004, she stayed for two years as postdoctoral fellowat Peking University. In 2006 she joined the University of Scienceand Technology, Beijing . Her research works focus on spintronicmaterials and devices, including half-metallic metal alloys,magnetic metal oxides materials and first-principles calculations.She has published more than 50 refereed journal papers and beengranted 4 patents.

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