Overview
Explosive developments in microelectronics, interest in nuclear metallurgy, and widespread applications in surface science have all produced many advances in the field of ion implantation. The research activity has become so intensive and so broad that the field has become divided into many specialized subfields. An Advanced Study Institute, covering the basic and common phenomena of aggregation, seems opportune for initiating interested scientists and engineers into these various active subfields since aggregation usually follows ion implantation. As a consequence, Drs. Perez, Coussement, Marest, Cachard and I submitted such a pro posal to the Scientific Affairs Division of NATO, the approval of which resulted in the present volume. For the physicist studying nuclear hyperfine interactions, the consequences of aggregation of implanted atoms, even at low doses, need to be taken into account if the results are to be correctly interpreted. For materials scientists and device engineers, under standing aggregation mechanisms and methods of control is clearly essential in the tailoring of the end products.
Full Product Details
Author: A. Perez ,
R. Coussement
Publisher: Springer Science+Business Media
Imprint: Kluwer Academic/Plenum Publishers
Edition: 1980 ed.
Volume: 47
Weight: 1.041kg
ISBN: 9780306402999
ISBN 10: 0306402998
Pages: 520
Publication Date: 01 January 1980
Audience:
Professional and scholarly
,
Professional & Vocational
Format: Hardback
Publisher's Status: Active
Availability: Out of stock

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