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OverviewElectronic systems and digital computers are indispensable elements of modern multimedia technologies and the Internet society. But their explosive advance would not have been possible without the extraordinary progress in VLSI technology using high-quality SiO2. This volume addresses the thin gate oxides involved in the individual processes in fabrication, e.g. the growth, cleaning and thermal oxidation of silicon, metal interconnect formation, and photolithography. It describes new methods for observing defects in SiO2 as well as novel approaches to eliminating such defects. The book will be a valuable resource for all materials scientists and engineers seeking to further advance the quality of silicon microdevices. Full Product DetailsAuthor: Manabu ItsumiPublisher: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG Imprint: Springer-Verlag Berlin and Heidelberg GmbH & Co. K Edition: 2003 ed. Volume: v. 56 Dimensions: Width: 15.60cm , Height: 2.00cm , Length: 23.40cm Weight: 0.659kg ISBN: 9783540433392ISBN 10: 3540433392 Pages: 322 Publication Date: 20 November 2002 Audience: College/higher education , Professional and scholarly , General/trade , Postgraduate, Research & Scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: In Print  This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of Contents1. Introduction.- 2. Outline of Silicon Processes.- 3. Basic Characteristics of SiO2.- 4. Oxide Defect Locating Method.- 5. Correlation between p-Si and n-Si Minority-Carrier Recombination Lifetimes.- 6. Wafer Transient Deformation Obseration.- 7. SiO2 Weak Spots Originating in Si Wafers.- 8. Wafer Cleaning Process Affecting SiO2 Dielectric Strength.- 9. Selective Oxidation Process Inducing SiO2 Weak-Spots.- 10. Thermal Oxidation Causing SiO2 Instability.- 11. Polysilicon Gate Formation Process Affecting SiO2 Quality.- 12. Metal Interconnect Formation Process Causing SiO2 Deterioration.- 13. Si-SiO2 Weak-Spots System Repaired from Plasma Damage Through Water Pouring.- 14. Local Weak-Spots Found in Poly-Oxides and Buried Oxides.- 15. Oxides Reliability.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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