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OverviewAppropriate for practicing engineers and graduate students, this dense collection details the many advances in using silicon germanium (SiGe) and silicon strained-layer epitaxy to practice bandgap engineering of semiconductor devices. Full Product DetailsAuthor: John D Cressler (Georgia Institute of Technology, Atlanta)Publisher: CRC Press Imprint: CRC Press ISBN: 9786611076634ISBN 10: 6611076638 Pages: 1249 Publication Date: 01 January 2006 Audience: General/trade , General Format: Electronic book text Publisher's Status: Active Availability: Out of stock The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available. Table of ContentsReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |