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OverviewAppropriate for practicing engineers and graduate students, this dense collection details the many advances in using silicon germanium (SiGe) and silicon strained-layer epitaxy to practice bandgap engineering of semiconductor devices. Full Product DetailsAuthor: John D Cressler (Georgia Institute of Technology, Atlanta Georgia Institute of Technology, Atlanta, USA)Publisher: CRC Press Imprint: CRC Press ISBN: 9781281076632ISBN 10: 1281076635 Pages: 1249 Publication Date: 01 January 2006 Audience: General/trade , General Format: Electronic book text Publisher's Status: Active Availability: In stock We have confirmation that this item is in stock with the supplier. It will be ordered in for you and dispatched immediately. Table of ContentsReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |