Silicon Devices and Process Integration: Deep Submicron and Nano-Scale Technologies

Author:   Badih El-Kareh
Publisher:   Springer-Verlag New York Inc.
Edition:   Softcover reprint of hardcover 1st ed. 2009
ISBN:  

9781441942241


Pages:   598
Publication Date:   29 October 2010
Format:   Paperback
Availability:   In Print   Availability explained
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Silicon Devices and Process Integration: Deep Submicron and Nano-Scale Technologies


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Overview

Silicon Devices and Process Integration covers state-of-the-art silicon devices, their characteristics, and their interactions with process parameters. It serves as a comprehensive guide which addresses both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. The book is compiled from the author’s industrial and academic lecture notes and reflects years of experience in the development of silicon devices. Features include: A review of silicon properties which provides a foundation for understanding the device properties discussion, including mobility-enhancement by straining silicon; State-of-the-art technologies on high-K gate dielectrics, low-K dielectrics, Cu interconnects, and SiGe BiCMOS; CMOS-only applications, such as subthreshold current and parasitic latch-up; Advanced Enabling processes and process integration. This book is written for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.

Full Product Details

Author:   Badih El-Kareh
Publisher:   Springer-Verlag New York Inc.
Imprint:   Springer-Verlag New York Inc.
Edition:   Softcover reprint of hardcover 1st ed. 2009
Dimensions:   Width: 15.50cm , Height: 3.10cm , Length: 23.50cm
Weight:   0.943kg
ISBN:  

9781441942241


ISBN 10:   1441942246
Pages:   598
Publication Date:   29 October 2010
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   In Print   Availability explained
This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us.

Table of Contents

Properties of the Silicon Crystal. Valence-bond and energy-band models. Thermal equilibrium statistics. Carrier transport mechanisms. Non-equilibrium conditions and carrier lifetime.- Junctions and Contacts. Ohmic, non-ohmic, and rectifying contacts. PN junctions, homo- and hetero-junctions. Contact und junction characterization, parameter extraction. Varactors.- Junction Field-Effect Transistor, JFET. Structure and mode of operation. Physics of JFET. JFET characterization and parameter extraction. High-voltage applications. Parasitic effects.- Bipolar Junction Transistor, BJT. Structure and mode of operation. Physics of BJT. Heterojunction Bipolar Transistor, HBT. Transistor characterization and parameter extraction. High-voltage applications.- Parasitic effects.

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