Overview

Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.Contents: Material Properties and TechnologyBreakdown VoltagePiN RectifiersSchottky RectifiersShielded Schottky RectifiersMetal-Semiconductor Field Effect TransistorsThe Baliga-Pair ConfigurationPlanar Power MOSFETsShielded Planar MOSFETsTrench-Gate Power MOSFETsShielded Trendch-Gate MOSFETsCharge Coupled StructuresIntegral DiodesLateral High Voltage FETsSynopsisReadership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.

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9781299990777

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