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OverviewThis book elaborately discusses the silicon carbide devices and their technology. Lately, a few Silicon Carbide (SiC-) power devices like metal-oxide-semiconductor field-effect-transistors (MOSFETs), Schottky-barrier diodes (SBDs), junction FETs (JFETs), and their combined modules have been introduced in the market. However, to securely supply them and decrease their cost, further enhancements for material characterizations as well as for device processing are still required. This book comprehensively elucidates current technologies on processing, modeling, characterization, manufacturing, and other important aspects of SiC devices. The aim of this book is to serve as a helpful source of information for advancements in SiC devices. Full Product DetailsAuthor: Bill FraleyPublisher: NY Research Press Imprint: NY Research Press Dimensions: Width: 15.20cm , Height: 2.40cm , Length: 22.90cm Weight: 0.717kg ISBN: 9781632384140ISBN 10: 1632384140 Pages: 412 Publication Date: 31 March 2015 Audience: General/trade , General Format: Hardback Publisher's Status: Active Availability: In stock We have confirmation that this item is in stock with the supplier. It will be ordered in for you and dispatched immediately. Table of ContentsReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |