SiGe, GaAs, and InP Heterojunction Bipolar Transistors

Author:   Jiann S. Yuan
Publisher:   John Wiley and Sons Ltd
ISBN:  

9780471197461


Pages:   488
Publication Date:   12 April 1999
Format:   Hardback
Availability:   Out of stock   Availability explained


Our Price $485.76 Quantity:  
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SiGe, GaAs, and InP Heterojunction Bipolar Transistors


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Author:   Jiann S. Yuan
Publisher:   John Wiley and Sons Ltd
Imprint:   John Wiley & Sons Inc
Dimensions:   Width: 16.80cm , Height: 2.70cm , Length: 24.70cm
Weight:   0.798kg
ISBN:  

9780471197461


ISBN 10:   0471197467
Pages:   488
Publication Date:   12 April 1999
Audience:   College/higher education ,  Professional and scholarly ,  Undergraduate ,  Postgraduate, Research & Scholarly
Format:   Hardback
Publisher's Status:   Out of Stock Indefinitely
Availability:   Out of stock   Availability explained

Table of Contents

Material Properties and Technologies. DC Performance. RF and Transient Performance. HBT Modeling. Heterojunction Device Simulation. Breakdown and Thermal Instability. Reliability. RF and Digital Circuits for Low-Voltage Applications. Index.

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Author Information

JIANN S. YUAN, PhD, is Associate Professor of Electrical Engineering at the University of Central Florida. Widely published in the area of HBT technology, Dr. Yuan is also the author of Semiconductor Device Physics, Simulation, and Analysis.

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