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OverviewAfter many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices - power switching Schottky diodes and high temperature MESFETs - are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology. Full Product DetailsAuthor: Pang Xiao-Feng , Feng Yuan-Ping , Michael Shur , Sergey RumyantsevPublisher: World Scientific Publishing Company Imprint: World Scientific Publishing Company ISBN: 9786611373313ISBN 10: 6611373314 Publication Date: 25 July 2006 Audience: General/trade , General Format: Electronic book text Publisher's Status: Active Availability: Out of stock  The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available. Table of ContentsReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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