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Author:   Peter A. Markowich ,  Christian A. Ringhofer ,  Christian Schmeiser
Publisher:   Springer Verlag GmbH
Imprint:   Springer Verlag GmbH
Edition:   1990 ed.
Dimensions:   Width: 15.60cm , Height: 1.50cm , Length: 23.40cm
Weight:   1.220kg
ISBN:  

9783211821572

ISBN 10:   3211821570
Pages:   248
Publication Date:   07 June 1990
Audience:   College/higher education ,  Professional and scholarly ,  Postgraduate, Research & Scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print  
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Table of Contents

1 Kinetic Transport Models for Semiconductors.- 1.1 Introduction.- 1.2 The (Semi-)Classical Liouville Equation.- 1.3 The Boltzmann Equation.- 1.4 The Quantum Liouville Equation.- 1.5 The Quantum Boltzmann Equation.- 1.6 Applications and Extensions.- Problems.- References.- 2 From Kinetic to Fluid Dynamical Models.- 2.1 Introduction.- 2.2 Small Mean Free Path—The Hilbert Expansion.- 2.3 Moment Methods—The Hydrodynamic Model.- 2.4 Heavy Doping Effects—Fermi-Dirac Distributions.- 2.5 High Field Effects—Mobility Models.- 2.6 Recombination-Generation Models.- Problems.- References.- 3 The Drift Diffusion Equations.- 3.1 Introduction.- 3.2 The Stationary Drift Diffusion Equations.- 3.3 Existence and Uniqueness for the Stationary Drift Diffusion Equations.- 3.4 Forward Biased P-N Junctions.- 3.5 Reverse Biased P-N Junctions.- 3.6 Stability and Conditioning for the Stationary Problem.- 3.7 The Transient Problem.- 3.8 The Linearization of the Transient Problem.- 3.9 Existence for the NonlinearProblem.- 3.10 Asymptotic Expansions on the Diffusion Time Scale.- 3.11 Fast Time Scale Expansions.- Problems.- References.- 4 Devices.- 4.1 Introduction.- 4.2 P-N Diode.- 4.3 Bipolar Transistor.- 4.4 PIN-Diode.- 4.5 Thyristor.- 4.6 MIS Diode.- 4.7 MOSFET.- 4.8 Gunn Diode.- Problems.- References.- Physical Constants.- Properties of Si at Room Temperature.

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