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OverviewThis book contains the first unified account of the currently used mathematical models for charge transport in semiconductor devices. It is focussed on a presentation of a hierarchy of models ranging from kinetic quantum transport equations to the classical drift diffusion equations. Particular emphasis is given to the derivation of the models, an analysis of the solution structure, and an explanation of the most important devices. The relations between the different models and the physical assumptions needed for their respective validity are clarified. The book addresses applied mathematicians, electrical engineers and solid-state physicists. It is accessible to graduate students in each of the three fields, since mathematical details are replaced by references to the literature to a large extent. It provides a reference text for researchers in the field as well as a text for graduate courses and seminars. Full Product DetailsAuthor: Peter A. Markowich , Christian A. Ringhofer , Christian SchmeiserPublisher: Springer Verlag GmbH Imprint: Springer Verlag GmbH Edition: 1990 ed. Dimensions: Width: 15.60cm , Height: 1.50cm , Length: 23.40cm Weight: 1.220kg ISBN: 9783211821572ISBN 10: 3211821570 Pages: 248 Publication Date: 07 June 1990 Audience: College/higher education , Professional and scholarly , Postgraduate, Research & Scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: In Print  This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of Contents1 Kinetic Transport Models for Semiconductors.- 1.1 Introduction.- 1.2 The (Semi-)Classical Liouville Equation.- 1.3 The Boltzmann Equation.- 1.4 The Quantum Liouville Equation.- 1.5 The Quantum Boltzmann Equation.- 1.6 Applications and Extensions.- Problems.- References.- 2 From Kinetic to Fluid Dynamical Models.- 2.1 Introduction.- 2.2 Small Mean Free Path—The Hilbert Expansion.- 2.3 Moment Methods—The Hydrodynamic Model.- 2.4 Heavy Doping Effects—Fermi-Dirac Distributions.- 2.5 High Field Effects—Mobility Models.- 2.6 Recombination-Generation Models.- Problems.- References.- 3 The Drift Diffusion Equations.- 3.1 Introduction.- 3.2 The Stationary Drift Diffusion Equations.- 3.3 Existence and Uniqueness for the Stationary Drift Diffusion Equations.- 3.4 Forward Biased P-N Junctions.- 3.5 Reverse Biased P-N Junctions.- 3.6 Stability and Conditioning for the Stationary Problem.- 3.7 The Transient Problem.- 3.8 The Linearization of the Transient Problem.- 3.9 Existence for the NonlinearProblem.- 3.10 Asymptotic Expansions on the Diffusion Time Scale.- 3.11 Fast Time Scale Expansions.- Problems.- References.- 4 Devices.- 4.1 Introduction.- 4.2 P-N Diode.- 4.3 Bipolar Transistor.- 4.4 PIN-Diode.- 4.5 Thyristor.- 4.6 MIS Diode.- 4.7 MOSFET.- 4.8 Gunn Diode.- Problems.- References.- Physical Constants.- Properties of Si at Room Temperature.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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