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Author:   H. Fukuda (Muroran Institute of Technology, Department of Electrical and Electronic Engineering, Mizumoto-cho, Muroran, Hokkaido, Japan)
Publisher:   Elsevier Science & Technology
Imprint:   Elsevier Science Ltd
Dimensions:   Width: 15.60cm , Height: 0.90cm , Length: 23.40cm
Weight:   0.310kg
ISBN:  

9780444513397

ISBN 10:   0444513396
Pages:   160
Publication Date:   02 April 2003
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   In Print  
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Table of Contents

Preface. RTP2001 Organization. 1. Role of Rapid Thermal Processing in the Development of Disruptive and Non-disruptive Technologies for Semiconductor Manufacturing in the 21st Centrury (R. Singh, M. Fakhruddin, K.F. Poole). 2. Analytical Model for Spike Annealed Diffusion Profiles of Low-Energy and High-Dose Ion Implanted Impurities (K. Suzuki, H. Tashiro). 3. Process and Technology Drivers for Single Wafer Processes in DRAM Manufacturing (R.A. Weimer, D.C. Powell, P.M. Lenahan). 4. Ultra-high Vacuum Rapid Thermal Chemical Vapor Deposition for Formation of TiN as Barrier Metals (S. Naito, M. Okada, O. Nakatsuka, T. Okuhara, A. Sakai, S. Zaima, Y. Yasuda). 5. Implementations of Rapid Thermal Processes in Polysilicon TFT Fabrication (M.K. Hatalis, A.T. Voutsas). 6. High-Perfomance Poly-Si TFT and its Application to LCD (H. Hamada, H. Abe, Y. Miyai). 7. Rapid Low Temperature Photo Oxidation Processing for Advanced Poly-Si TFTs (Y. Nakata, T. Itoga, T. Okamoto, T. Hamada, Y. Ishii). 8. Properties of Phosphorus-Doped Polycrystalline Silicon Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing (R. Morimoto, A. Izumi, A. Masuda, H. Matsumura) 9. Evaluation of Crystalline Defects in Thin, Strained Silicon-Germanium Epitaxial Layers by Optical Shallow Defect Analyzer (Y. Kiyota, K. Takeda). 10. Novel UV-assisted Rapid Thermal Annealing of Ferroelectric Materials (E. Lynch, S. O'Brien, P.V. Kelly, H. Guillon, L. Pardo, R. Poyato, A. Gonzalez, M.L. Calzada, I. Stolichnov). 11. Rapid Thermal Annealing of (1-x)Ta2O5-xTiO2 Thin Films Formed by Metalorganic Decomposition (K.M.A. Salam, H. Konishi, H. Fukuda, S. Nomura) 12. Hard Breakdown Characteristics in a 2.2-nm-thick SiO2 film (K. Komiya, M. Nagahara, Y. Omura). 13. Rapid Thermal MOCVD Processing for InP-Based Devices (O. Kreinin, G. Bahir). 14. Sb Pile-up at the SiO2/Si Interface during Drive-in Process after Predeposition using SOG Source (T. Ichino, H. Uchida, M. Ichimura, E. Arai). 15. Large Refractive Index C-S-Au Composite Film Formation by Plasma Processes (M. Matsushita, Md.A. Kashem, S. Morita). 16. The LEVITOR 4000 system, Ultra-fast, Emissivity-independent, Heating of Substrates via Heat Conduction through Thin Gas Layers (E.H.A. Granneman, V.I. Kuznetsov, A.B. Storm, H. Terhorst). 17. Steady and Transient Gas Flow Simulation of SiGe Vertical Reactor (A. Miyauchi, H. Yamazaki, Y. Inokuchi, Y. Kunii). 18. The Short-period (Si14/Ge1)20 and (Si28/Ge2)10 superlattices as Buffer Layers for the Growth of Si0.75Ge0.25 Alloy Layers (M.M. Rahman, K. Kurumatani, T. Tambo, C. Tatsuyama). 19. Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH4 Reaction (Y. Jeong, M. Sakabura, T. Matsuura, J. Murota). 20. Heavy Doping Characteristics of Si Films Epitaxially Grown at 450oC by Alternately Supplied PH3 and SiH4 (Y. Shimamune, M. Sakuraba, T. Matsuura, J. Murota).

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