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OverviewFollowing their first observation in 1984, random telegraph signals (RTS) were initially a purely scientific tool to study fundamental aspects of defects in semiconductor devices. As semiconductor devices move to the nanoscale however, RTS have become an issue of major concern to the semiconductor industry, both in the development of current technology, such as memory devices and logic circuits, as well as in future semiconductor devices beyond the silicon roadmap, such as nanowire, TFET and carbon nanotube-based devices. It has become clear that the reliability of state-of-the-art and future CMOS technology nodes is dominated by RTS and single-trap phenomena, and so its understanding is of vital importance for the modelling and simulation of the operation and the expected lifetime of CMOS devices and circuits. It is the aim of this book to provide a comprehensive and up-to-date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of RTS to applied technology. Full Product DetailsAuthor: Eddy Simoen (imec and Ghent University, Belgium) , Cor Claeys (imec and KU Leuven, Belgium)Publisher: Institute of Physics Publishing Imprint: Institute of Physics Publishing Dimensions: Width: 17.80cm , Height: 1.40cm , Length: 25.40cm Weight: 0.581kg ISBN: 9780750312738ISBN 10: 0750312734 Pages: 216 Publication Date: 01 November 2016 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: In Print  This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of Contents1) Introduction 2) RTS phenomenology a. RTS time constants i. Shockley-Read-Hall framework ii. Trap energy, capture barrier and location from SRH approach iii. Non SRH behavior: Coulomb blockade effects iv. Tunneling transitions b. RTS amplitude behavior c. RTS in the gate current of a MOS device d. RTS in the junction leakage current of a MOSFET e. Multiple and complex RTS 3) RTS modeling, simulation and parameter extraction a. Time constant modeling and simulation b. Extraction trap position from RTN time constants c. RTS amplitude modelling d. Atomistic numerical modeling of the RTS amplitude e. Novel measurement and analysis methods f. Ab initio modeling of RTS in gate dielectrics 4) Impact device processing and scaling on RTS a. Processing effects on RTS b. RTS in fin-type architectures c. Nanometric scaling aspects of RTS i. Scaling trend RTS amplitude ii. Silicon Gate-All-Around Nanowires iii. High-mobility channel materials iv. RTS in Tunnel FETs d. RTS in beyond-silicon devices i. Carbon Nanotubes (CNT) FETs ii. Other advanced devices 5) Operational and Reliability aspects of RTS a. Switching AC operation of RTS b. Impact of uniform and hot-carrier degradation c. BTI and RTS: oxide trapping? d. Statistical RTS measurement methods e. Device and circuit simulation of dynamic variability 6) RTS in memory and imager circuits a. RTS in Flash and SRAM cells b. RTS in DRAM and logic circuits c. RTS in novel ReRAM and PC memories d. RTS in CMOS Imagers and CCDsReviewsAuthor InformationEddy Simoen is Senior Researcher at imec and Professor at Ghent University, Belgium. Cor Claeys is Director of Advanced Semiconductor Technologies at imec, and Professor at KU Leuven, Belgium. Tab Content 6Author Website:Countries AvailableAll regions |
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