Overview

This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide- semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.

Full Product Details

Author:   Ronald D Schrimpf (Vanderbilt Univ, Usa) ,  Daniel M Fleetwood (Vanderbilt Univ, Usa)
Publisher:   World Scientific Publishing Co Pte Ltd
Imprint:   World Scientific Publishing Co Pte Ltd
Volume:   34
Dimensions:   Width: 16.80cm , Height: 2.30cm , Length: 24.90cm
Weight:   0.680kg
ISBN:  

9789812389404

ISBN 10:   9812389407
Pages:   348
Publication Date:   03 August 2004
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   Awaiting stock  
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"""Ron Schrimpf and Dan Fleetwood are world renowned experts in radiation effects. This book is a great resource ..."""

Ron Schrimpf and Dan Fleetwood are world renowned experts in radiation effects. This book is a great resource ...

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