Overview

The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.

Full Product Details

Author:   Abrosimova Vera (Inst Of Microelectronics Tech & High Purity Materials, Russia) ,  Vitali V Kozlovski (St Petersburg State Tech Univ, Russia)
Publisher:   World Scientific Publishing Co Pte Ltd
Imprint:   World Scientific Publishing Co Pte Ltd
Volume:   37
Dimensions:   Width: 17.20cm , Height: 2.20cm , Length: 25.60cm
Weight:   0.721kg
ISBN:  

9789812565211

ISBN 10:   9812565213
Pages:   264
Publication Date:   21 November 2005
Audience:   College/higher education ,  Professional and scholarly ,  Tertiary & Higher Education ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   Awaiting stock  
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Table of Contents

* Ion-Stimulated Processes * Transmutation Doping of Semiconductors by Charged Particles * Doping of Semiconductors Using Radiation Defects * Formation of Buried Porous and Damaged Layers

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