Proceedings of the 25th International Conference on the Physics of Semiconductors Part I: Osaka, Japan, September 17–22, 2000

Author:   N. Miura ,  T. Ando
Publisher:   Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Volume:   87
ISBN:  

9783642639937


Pages:   1846
Publication Date:   04 October 2011
Format:   Paperback
Availability:   Manufactured on demand   Availability explained
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Proceedings of the 25th International Conference on the Physics of Semiconductors Part I: Osaka, Japan, September 17–22, 2000


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Overview

As the proceedings of the most important and prestigious conference in the field of semiconductor physics, this book contains the latest information on the progress of semiconductor physics. Almost 1000 contributed papers address the full range of current topics. The special symposium deals with the interface between the fundamentals and device applications and tries to predict the developments in semiconductor physics, semiconductor materials and device applications in the 21st century. A wide range of contributions represent the forefront of academic and industrial research.

Full Product Details

Author:   N. Miura ,  T. Ando
Publisher:   Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Imprint:   Springer-Verlag Berlin and Heidelberg GmbH & Co. K
Volume:   87
Dimensions:   Width: 21.00cm , Height: 4.70cm , Length: 27.70cm
Weight:   2.290kg
ISBN:  

9783642639937


ISBN 10:   3642639933
Pages:   1846
Publication Date:   04 October 2011
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand   Availability explained
We will order this item for you from a manufactured on demand supplier.

Table of Contents

Prefaces.- Plenary Papers.- Bulk and Dynamics.- Growth, Surfaces, and Interfaces.- Heterostructures and Superlattices: Optical.- Heterostructures and Superlattices: Transport.- 2D Systems with High Magnetic Fields: Optical and Transport.- One and Zero Dimensional Systems.- Defects and Impurities.- Wide Band Gap Materials (SiC, GaN, II-VI, etc.).- New Materials and New Concepts.- Technology and Devices.

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