Principles and Analysis of AlGaAs/GaAs Heterojunction Bipolar Transistors

Author:   J. J. Liou
Publisher:   Artech House Publishers
Edition:   Unabridged edition
ISBN:  

9780890065877


Pages:   227
Publication Date:   31 March 1996
Format:   Hardback
Availability:   Out of stock   Availability explained
The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available.

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Principles and Analysis of AlGaAs/GaAs Heterojunction Bipolar Transistors


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Overview

The first book devoted entirely to HBTs, this reference examines the basic concept, standard and advanced structures, noise performance, reliability issues, and simulation. The book's main emphasis is on device physics and its mathematical representations, through which the operational characterization of AlGaAs/GaAs HBTs can be understood. It enables device engineers, device researchers, and circuit designers to increase their knowledge of HBT principles and behavior with significantly less literature research time, and to design optimal HBTs with minimal design time. Extensively referenced, with 150 illustrations and 250 equations.

Full Product Details

Author:   J. J. Liou
Publisher:   Artech House Publishers
Imprint:   Artech House Publishers
Edition:   Unabridged edition
Dimensions:   Width: 15.20cm , Height: 1.80cm , Length: 22.90cm
Weight:   0.526kg
ISBN:  

9780890065877


ISBN 10:   089006587
Pages:   227
Publication Date:   31 March 1996
Audience:   Professional and scholarly ,  General/trade ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   Out of stock   Availability explained
The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available.

Table of Contents

Introduction. Abrupt AlGaAs/GaAs HBT. Collector and Base Current in Abrupt HBT. Cutoff Frequency. Avalanche Multiplication Characteristics. Enhanced Structures, Base Grading, Setback Layer, and Graded Layer. Combined Effect of Setback and Graded Layers. Thermal Effect in AlGaAs/GaAs HBT. Self-Heating and Thermal Coupling Effects in Multiple-Emitter Finger HBT. Thermal-Avalanche Interacting Behavior. Base and Collector Leakage Currents. Leakage Currents at the Emitter-Base, Base-Collector, and Collector-Subcollector Peripheries, and the Subcollector-Substrate Interface. Base and Collector Currents Including Normal and Leakage Components. Leakage Current Characteristics in Post-Burn. Noise and High-Frequency Noise Characteristics. Overview of 1/F, Burst, and Shot Noise. Numerical Simulation. Overview of Two-Dimensional Device Simulator MEDICI. Effects of Graded Layer, Setback Layer, and Self-Heating. Effects of Different Base and Collector Structures.

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