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OverviewThis study presents knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon. By properly understanding the properties of polycrystalline silicon and their relation to the deposition conditions, polysilicon can be designed to ensure optimum device and integrated-circuit performance. Polycrystalline silicon has played an important role in integrated-circuit technology for two decades. It was first used in self-aligned, silicon-gate, MOS ICs to reduce capacitance and improve circuit speed. In addition to this dominant use, polysilicon is now also included in virtually all modern bipolar ICs, where it improves the basic physics of device operation. The compatibility of polycrystalline silicon with subsequent high-temperature processing allows its efficient integration into advanced IC processes. This compatibility also permits polysilicon to be used early in the fabrication process for trench isolation and dynamic random-access-memory (DRAM) storage capacitors. In addition to its integrated-circuit applications, polysilicon is becoming vital as the active layer in the channel of thin-film transistors in place of amorphous silicon. When polysilicon thin-film transistors are used in advanced active-matrix displays, the peripheral circuitry can be integrated into the same substrate as the pixel transistors. Recently, polysilicon has been used in the emerging field of microelectromechanical systems (MEMS), especially for microsensors and microactuators. In these devices, the mechanical properties, especially the stress in the polysilicon film, are critical to successful device fabrication. The text should be a valuable reference for professionals and technicians working with polycrystalline silicon in the integrated circuit and display industries. Full Product DetailsAuthor: Ted KaminsPublisher: Springer Imprint: Springer Edition: 2nd ed. 1998 Dimensions: Width: 15.50cm , Height: 2.30cm , Length: 23.50cm Weight: 1.640kg ISBN: 9780792382249ISBN 10: 0792382242 Pages: 378 Publication Date: 31 July 1998 Audience: Professional and scholarly , General/trade , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: In Print  This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of Contents1. Deposition.- 1.1 Introduction.- 1.2 Thermodynamics and kinetics.- 1.3 The deposition process.- 1.4 Gas-phase and surface processes.- 1.5 Reactor geometries.- 1.6 Reaction.- 1.7 Deposition from disilane.- 1.8 Deposition of doped films.- 1.9 Conformai deposition.- 1.10 Enhanced deposition techniques.- 1.11 Summary.- 2. Structure.- 2.1 Nucleation.- 2.2 Surface diffusion and structure.- 2.3 Evaluation techniques.- 2.4 Grain structure.- 2.5 Grain orientation.- 2.6 Optical properties.- 2.7 Thermal conductivity.- 2.8 Mechanical properties.- 2.9 Oxygen contamination.- 2.10 Etching.- 2.11 Structural stability.- 2.12 Hemispherical-grain (HSG) polysilicon.- 2.13 Epitaxial realignment.- 2.14 Summary.- 3. Dopant Diffusion and Segregation.- 3.1 Introduction.- 3.2 Diffusion mechanism.- 3.3 Diffusion in polysilicon.- 3.4 Diffusion from polysilicon.- 3.5 Interaction with metals.- 3.6 Dopant segregation at grain boundaries.- 3.7 Computer modeling of diffusion.- 3.8 Summary.- 4. Basic Definitions of The Fuzzy Sets Theory.- 4.1 Introduction.- 4.2 Oxide growth on polysilicon.- 4.3 Conduction through oxide on polysilicon.- 4.4 Summary.- 5. Basic Definitions of The Fuzzy Sets Theory.- 5.1 Introduction.- 5.2 Undoped polysilicon.- 5.3 Amorphous silicon.- 5.4 Moderately doped polysilicon.- 5.5 Grain-boundary modification.- 5.6 Heavily doped polysilicon.- 5.7 Minority-carrier properties.- 5.8 Summary.- 6. Applications.- 6.1 Introduction.- 6.2 Silicon-gate MOS transistor.- 6.3 Nonvolatile memories.- 6.4 Polysilicon resistors.- 6.5 Fusible links.- 6.6 Gettering.- 6.7 Polysilicon contacts.- 6.8 Vertical npn bipolar transistors.- 6.9 Lateral pnp bipolar transistors.- 6.10 Device isolation.- 6.11 Dynamic random-access memories.- 6.12 Polysilicon diodes.- 6.13 Polysilicon thin-film transistors.- 6.14 Microelectromechanical Systems.- 6.15 Summary.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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