Polycrystalline Semiconductors: Physical Properties and Applications: Proceedings of the International School of Materials Science and Technology at the Ettore Majorana Centre, Erice, Italy, July 1–15, 1984

Author:   G. Harbeke
Publisher:   Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Edition:   Softcover reprint of the original 1st ed. 1985
Volume:   57
ISBN:  

9783642824432


Pages:   248
Publication Date:   28 January 2012
Format:   Paperback
Availability:   Manufactured on demand   Availability explained
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Polycrystalline Semiconductors: Physical Properties and Applications: Proceedings of the International School of Materials Science and Technology at the Ettore Majorana Centre, Erice, Italy, July 1–15, 1984


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Overview

In terms of structure, the field of semiconductors spans a wide range, from the perfect order of single crystals to the non-periodic, disordered amorph­ ous state. The two extremes of this range attract a large amount of inter­ est. On one side, glamorous novel phenomena are being found which can only occur in specially tailored ultra-perfect periodic lattices. On the other side, the exotic and challenging nature of the amorphous state has triggered a surge of activity in recent years. Po1ycrystall i ne semi conductors are in between. They are among the work­ horses in the field, useful in many applications, a handy solution to many practical problems and still - they have not received in the past the amount of research interest that they deserve. It is the aim of the present book to improve this situation. The book originated from the lectures and seminars presented at the course on ""Po1ycrystall i ne Semi conductors - Physical Properties and Applications"" of ""the International School on Materials Scien­ ce and Technology, hel d at the Centre for Sci entifi c Culture ""Ettore Majorana"" in Erice, Italy, July 1-15, 1984.

Full Product Details

Author:   G. Harbeke
Publisher:   Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Imprint:   Springer-Verlag Berlin and Heidelberg GmbH & Co. K
Edition:   Softcover reprint of the original 1st ed. 1985
Volume:   57
Dimensions:   Width: 15.50cm , Height: 1.30cm , Length: 23.50cm
Weight:   0.400kg
ISBN:  

9783642824432


ISBN 10:   3642824439
Pages:   248
Publication Date:   28 January 2012
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand   Availability explained
We will order this item for you from a manufactured on demand supplier.

Table of Contents

I Fundamental Aspects of Grain Boundaries.- Atomic Structure of Grain Boundaries. (With 5 Figures).- Computer Calculations of Grain Boundary Energies in Germanium and Silicon. (With 4 Figures).- The Geometrical Character of Extended Interfacial Defects in Semiconducting Materials. (With 12 Figures).- Grain Boundary Segregation. Grain Boundary Diffusion. (With 22 Figures).- II Electronic Characterization of Grain Boundaries.- Electronic Properties of Grain Boundaries. (With 15 Figures).- Electronic States at Grain Boundaries in Semiconductors. (With 15 Figures).- Electrical Properties of Grain Boundaries in the Presence of Deep Bulk Traps. (With 7 Figures).- Beam Induced Current Characterization in Polycrystalline Semiconductors. (With 17 Figures).- III Properties and Applications of Polycrystalline Silicon.- Optical Properties of Polycrystalline Silicon Films. (With 10 Figures).- Polycrystalline Silicon in Integrated Circuits. (With 13 Figures).- IV Applications of Polycrystalline Semiconductor Compounds.- Electroluminescence in Polycrystalline Semiconductors. (With 21 Figures).- The Electrical Properties of Oxides Under Conditions of Oxidation, Reduction and Catalysis.- Evolution of Physical Models for ZnO-Varistors — A Review. (With 18 Figures).- Index of Contributors.

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