Overview

This book provides an in-depth, comprehensive and up-to-date coverage of the subject of plasma charging damage in modern VLSI circuit manufacturing. It is written for beginners as well as practitioners. For beginners, this book presents an easy-to-follow, unified explanation of various charging-damage phenomena, the goal being to provide them with a solid foundation for taking on real damage problems encountered in VLSI manufacturing. For practitioners, it can help bridge the gap between disciplines by providing all of the necessary background materials in one place.Drawing on the author's wide range of experience in plasma science, processing technologies, device physics and reliability physics, the text includes information on: - plasma and mechanisms of plasma damage;- wear-out and breakdown of thin gate-oxides;- the impact of processing equipment on damage;- methods of damage measurement;- damage management; - gate-oxide scaling.

Full Product Details

Author:   Kin P. Cheung
Publisher:   Springer London Ltd
Imprint:   Springer London Ltd
Edition:   2001 ed.
Dimensions:   Width: 15.50cm , Height: 2.00cm , Length: 23.50cm
Weight:   1.510kg
ISBN:  

9781852331443

ISBN 10:   1852331445
Pages:   346
Publication Date:   04 October 2000
Audience:   College/higher education ,  Professional and scholarly ,  Undergraduate ,  Postgraduate, Research & Scholarly
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print  
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Table of Contents

1. Thin Gate-oxide Wear-out and Breakdown.- 1.1 The MOSFET.- 1.2 Tunneling Phenomena in Thin Oxide.- 1.3 Thin Oxide Breakdown Measurements.- 1.4 Gate-oxide Breakdown Models.- 1.5 Trap Generation Model and Acceleration Factors.- 1.6 Defects, Traps and Latent Defects.- References.- 2. Mechanism of Plasma Charging Damage I.- 2.1 Basic Plasma Characteristics.- 2.2 Charge Balance and Plasma Charging.- 2.3 Charging in the Presence of an Applied Bias.- 2.4 Fowler-Nordheim (FN) Tunneling and Charge Balance.- 2.5 Antenna Effect.- 2.6 Uniformity of Electron Temperature.- 2.7 Charging Damage by High-density Plasma.- References.- 3. Mechanism of Plasma Charging Damage II.- 3.1 Electron-shading Effect.- 3.2 AC Charging Effect.- 3.3 RF Bias Transient Charging Damage.- References.- 4. Mechanism of Plasma Charging Damage III.- 4.1 Plasma Charging Damage from Dielectric Deposition.- 4.2 Plasma Charging Damage from Magnetized Plasma.- 4.3 Plasma Charging Damage at the Transistor Channel’s Edge.- 4.4 Plasma Charging Damage in Very Short Range.- 4.5 Hidden Antenna Effects.- References.- 5. Charging Damage Measurement I ¡ª Determination of Plasma’s Ability to Cause Damage.- 5.1 Direct Plasma Property Measurement with Langmuir Probe.- 5.2 Stanford Plasma-On-Wafer Real-Time (SPORT) Probe.- 5.3 Using MNOS Device to Measure Plasma Charging Voltage.- 5.4 EEPROM and CHARM®.- 5.5 Common Problems with Methods that Measure Plasma Properties Directly.- 5.6 Rapid In-line Charge Sensing Methods.- References.- 6. Charging Damage Measurement II ¡ª Direct Measurement of Damage.- 6.1 Measurement Challenge.- 6.2 Test Devices.- 6.3 Breakdown Tests.- 6.4 Wear-out Tests.- References.- 7. Coping with Plasma Charging Damage.- 7.1 Impact of Plasma Charging Damage on Yield and Reliability.- 7.2 Fixing theDamaging Process.- 7.3 Use of Design Rules.- 7.4 Diode Protection.- 7.5 Failure Criteria Problem.- 7.6 Projecting the Yield Impact to Products.- 7.7 Projecting the Reliability Impact to Products.- 7.8 Ultra-thin Gate-oxide Issues.- 7.9 The Damage Measurement Problem for Ultra-thin Gate-oxide.- References.

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