Physics of Semiconductor Devices

Author:   Massimo Rudan
Publisher:   Springer-Verlag New York Inc.
Edition:   Softcover reprint of the original 1st ed. 2015
ISBN:  

9781493946990


Pages:   649
Publication Date:   10 September 2016
Format:   Paperback
Availability:   Manufactured on demand   Availability explained
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Physics of Semiconductor Devices


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Author:   Massimo Rudan
Publisher:   Springer-Verlag New York Inc.
Imprint:   Springer-Verlag New York Inc.
Edition:   Softcover reprint of the original 1st ed. 2015
Dimensions:   Width: 15.50cm , Height: 3.50cm , Length: 23.50cm
Weight:   1.021kg
ISBN:  

9781493946990


ISBN 10:   1493946994
Pages:   649
Publication Date:   10 September 2016
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand   Availability explained
We will order this item for you from a manufactured on demand supplier.

Table of Contents

Part I A Review of Analytical Mechanics and Electromagnetism.- Analytical Mechanics.- Coordinate Transformations and Invariance Properties.- Applications of the Concepts of Analytical Mechanics.- Electromagnetism.- Applications of the Concepts of Electromagnetism.- Part II Introductory Concepts to Statistical and Quantum Mechanics.- Classical Distribution Function and Transport Equation.- From Classical Mechanics to Quantum Mechanics.- Time-Independent Schrodinger Equation.- Time-Dependent Schrodinger Equation.- General Methods of Quantum Mechanics.- Part III Applications of the Schrodinger Equation.- Elementary Cases.- Cases Related to the Linear Harmonic Oscillator.- Other Examples of the Schrodinger Equation.- Time-Dependent Perturbation Theory.- Part IV Systems of Interacting Particles— Quantum Statistics.- Many-Particle Systems.- Separation of Many-Particle Systems.- Part V Applications to Semiconducting Crystals.- Periodic Structures.- Electrons and Holes in Semiconductors at Equilibrium.- Part VI Transport Phenomena in Semiconductors.- Mathematical Model of Semiconductor Devices.- Generation-Recombination and Mobility.- Part VII Basic Semiconductor Devices.- Bipolar Devices.- MOS Devices.- Part VIII Miscellany.- Thermal Diffusion.- Thermal Oxidation— Layer Deposition.- Measuring the Semiconductor Parameters.

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M. Rudan (b. 1949) graduated in Electrical Engineering (1973) and in Physics (1976), both at the University of Bologna, Italy. Lecturer (1978), Associate Professor (1985), and Full Professor of Electronics (1990) at the Faculty of Engineering of the same University. Early investigations (1975-1980) in the field of the analytical modeling of semiconductor devices. Since 1980 M. R. has been working in a group involved in investigations on physics of carrier transport and numerical analysis of semiconductor devices. Visiting scientist, on a one-year assignment (1986), at the IBM T. J. Watson Research Center, studying solution methods for the Boltzmann Transport Equation. Reviewer and Guest Editor of the IEEE Transactions on Computer-Aided Design and IEEE Transactions on Electron Devices; Editor of COMPEL and of the International Journal of Numerical Modeling; Reviewer of the IEEE Electron Device Letters, Solid-State Electronics, Electronics Letters, Physical Review B, Journal of Applied Physics; Program Chairman, Chairman, or Committee Member, of the IEDM, SISDEP (SISPAD), ESSDERC, and IWCE International Conferences. With H. Baltes and W. Göpel, M. R. is a recipient of the 1998 Körber Foundation Award for the Project “Elektronische ‘Mikronase’ für flüchtige organische Verbindungen” (“Electronic ‘Micronose’ for Volatile Organic Compounds”). In 2001 M. R. was one of the founders of the Advanced Research Center for Electronic Systems (ARCES) of the University of Bologna. Distinguished Lecturer of the Electron Device Society of the IEEE (2004) and IEEE Fellow (2008). 

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