Overview

Knowledge of the refractive indices and absorption coefficients of semiconductors is especially important in the design and analysis of optical and optoelectronic devices. The determination of the optical constants of semiconductors at energies beyond the fundamental absorption edge is also known to be a powerful way of studying the electronic energy-band structures of the semiconductors. This text gives the reader tabulated values and graphical information on the optical constants of the most popular semiconductors, in order to develop an understanding of the optical response of crystalline and amorphous semiconductors over the entire spectral range. Device engineers, material scientists, solid strata physicists and students specializing in the fields of semiconductor physics and device engineering should find this a useful reference tool.

Full Product Details

Author:   Sadao Adachi
Publisher:   Springer
Imprint:   Springer
Edition:   1999 ed.
Dimensions:   Width: 15.50cm , Height: 3.90cm , Length: 23.50cm
Weight:   2.660kg
ISBN:  

9780792385677

ISBN 10:   0792385675
Pages:   714
Publication Date:   31 August 1999
Audience:   College/higher education ,  Professional and scholarly ,  Postgraduate, Research & Scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print  
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Table of Contents

Introductory Remarks.- References.- A Group-VI Semiconductors.- A1 Diamond (C).- A2 Silicon (Si).- A3 Germanium (Ge).- A4 Gray Tin (?-Sn).- A5 Cubic Silicon Carbide (3C-SiC).- A6 Hexagonal Silicon Carbide (2H-, 4H-, and 6H-SiC).- A7 Rhombohedral Silicon Carbide (15R-SiC).- A8 Silicon-Germanium Alloy (Six/Ge1-x).- A9 Carbon-Incorporated Alloys (Si1-xC1-x, Si1-x-yGexCy, etc.).- B III-V Binary Semiconductors.- B1 Cubic Boron Nitride (c-BN).- B2 Hexagonal Boron Nitride (h-BN).- B3 Boron Phosphide (BP).- B4 Boron Arsenide (BAs).- B5 Aluminium Nitride (A1N).- B6 Aluminium Phosphide (AIP).- B7 Aluminium Arsenide (AlAs).- B8 Aluminium Antimonide (AlSb).- B9 Wurtzite Gallium Nitride (?-GaN).- B10 Cubic Gallium Nitride (ß-GaN).- B11 Gallium Phosphide (GaP).- B12 Gallium Arsenide (GaAs).- B13 Gallium Antimonide (GaSb).- B14 Indium Nitride (InN).- B15 Indium Phosphide (InP).- B16 Indium Arsenide (InAs).- B17 Indium Antimonide (InSb).- C III-V Alloy Semiconductors.- C1 General Remarks.- C2 Ternary Alloys.- C3 Quaternary Alloys.- D II–VI Semiconductors.- D1 Magnesium Oxide (MgO).- D2 Zinc Oxide (ZnO).- D3 Wurtzite Zinc Sulphide (?-ZnS).- D4 Cubic Zinc Sulphide (ß-ZnS).- D5 Zinc Selenide (ZnSe).- D6 Zinc Telluride (ZnTe).- D7 Cubic Cadmium Sulphide (c-CdS).- D8 Wurtzite Cadmium Sulphide (w-CdS).- D9 Cubic Cadmium Selenide (c-CdSe).- D10 Wurtzite Cadmium Selenide (w-CdSe).- D11 Cadmium Telluride (CdTe).- D12 Mercury Selenide (HgSe).- D13 Mercury Telluride (HgTe).- D14 Magnesium Cadmium Telluride (MgxCd1-xTe).- D15 Zinc Cadmium Selenide (ZnxCd1-xSe).- D16 Zinc Cadmium Telluride (ZnxCd1-xTe).- D17 Zinc Sulpho-Selenide (ZnSxSe1-x).- D18 Zinc Seleno-Telluride (ZnSexTe1-x).- D19 Cadmium Sulpho-Selenide (CdSxSe1-x).- D20 Mercury Zinc Telluride (Hg1-xZnxTe).- D21 Mercury CadmiumSelenide (Hg1-xCdxSe).- D22 Mercury Cadmium Telluride (Hg1-xCdxTe).- D23 Zinc-Based Semimagnetic Ternary Alloys (Zn1-xMnxS, Zn1-xMnxSe, etc.).- D24 Cadmium-Based Semimagnetic Ternary Alloys (Cd1-xMnxSe, Cd1-xMnx.Te, etc.).- D25 Quaternary Alloys (Zn1-xMgxSySe1-y and MgxZnyCd1-x-ySe).- E IV-VI Semiconductors.- E1 Lead Sulphide (PbS).- E2 Lead Selenide (PbSe).- E3 Lead Telluride (PbTe).- E4 Tin Telluride (SnTe).- E5 Lead Tin Selenide (Pb1-xSnxSe).- E6 Lead Tin Telluride (Pb1-xSnxTe).- F Amorphous Semiconductors.- F1 a-Diamond-Like Carbon (a-DLC).- F2 a-Silicon (a-Si).- F3 a-Germanium (a-Ge).- F4 a-Silicon–Carbon (a-Si1-x Cx).- F5 a-Gallium Phosphide (a-GaP).- F6 a-Gallium Arsenide (a-GaAs).- F7 a-Gallium Antimonide (a-GaSb).- F8 a-Indium Phosphide (a-InP).- F9 a-Indium Arsenide (a-InAs).- F10 a-Indium Antimonide (a-InSb).

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