Operation and Modeling of the MOS Transistor, Third Edtion International Edition

Author:   Yannis Tsividis (Charles Batchelor Professor of Electrical Engineering, Charles Batchelor Professor of Electrical Engineering, Columbia University) ,  Colin McAndrew (Fellow, Fellow, IEEE)
Publisher:   Oxford University Press Inc
Edition:   3rd Revised edition
ISBN:  

9780199829835


Pages:   736
Publication Date:   13 September 2012
Format:   Paperback
Availability:   To order   Availability explained
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Operation and Modeling of the MOS Transistor, Third Edtion International Edition


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Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor-the key element of modern microelectronic chips.

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Author:   Yannis Tsividis (Charles Batchelor Professor of Electrical Engineering, Charles Batchelor Professor of Electrical Engineering, Columbia University) ,  Colin McAndrew (Fellow, Fellow, IEEE)
Publisher:   Oxford University Press Inc
Imprint:   Oxford University Press Inc
Edition:   3rd Revised edition
Dimensions:   Width: 23.50cm , Height: 2.80cm , Length: 19.30cm
Weight:   1.161kg
ISBN:  

9780199829835


ISBN 10:   0199829837
Pages:   736
Publication Date:   13 September 2012
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   To order   Availability explained
Stock availability from the supplier is unknown. We will order it for you and ship this item to you once it is received by us.

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Yannis Tsividis is Charles Batchelor Professor of Electrical Engineering at Columbia University. His work with MOS transistors began in 1975 as part of his Ph.D. work at the University of California, Berkeley, in the context of the design and fabrication of the first fully-integrated MOS operational amplifier. He is a Fellow of IEEE. Among his awards are the 1984 IEEE W. R. G. Baker Prize for the best IEEE publication and the 2003 IEEE International Solid-State Circuits Conference Outstanding Paper Award. Colin McAndrew became involved with modeling semiconductor devices in 1987 and has contributed to the development of models for MOS, bipolar, and passive devices. He developed the backward-propagation-of-variation (BPV) technique for statistical modeling and has been a primary advocate of the use of Verilog-A and compilers for device modeling. He has a Ph.D. from the University of Waterloo, works at Freescale Semiconductor, and is a Fellow of the IEEE.

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