Free Delivery Over $100
|
|
|||
|
||||
OverviewFull Product DetailsAuthor: A. Hangleiter (Optoelectronics Group, University of Stuttgart, Germany) , J.-Y. Duboz (Central Research Laboratory, Thomson-CSF, Orsay, France) , K. Kishino (Electrical and Electronics Engineering, Sophia University, Tokyo, Japan) , F.A. Ponce (Xerox Parc, Palo Alto. CA, USA)Publisher: Elsevier Science & Technology Imprint: Elsevier Science Ltd Volume: v. 87 Dimensions: Width: 17.50cm , Height: 2.50cm , Length: 24.40cm Weight: 1.060kg ISBN: 9780080436159ISBN 10: 0080436153 Pages: 432 Publication Date: 11 August 1999 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: Out of stock  The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available. Table of ContentsChapter headings and selected papers: Preface. Bulk Growth and Hydride Vapor Phase Epitaxy. High pressure fabrication and processing of GaN:Mg (T.Suski et al.). Metalorganic Vapor Phase Eqitaxy. Sub-bandgap optical absorption of MOVPE-GaN grown under controlled nucleation (P. de Mierry et al.). Molecular Beam Epitaxy. Influence of buffer layers on the structural properties of molecular beam epitaxy grown GaN layers (V. Kirchner et al.). Lateral Growth. Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy (K. Hiramatsu et al.). Luminescence, Excitons and Optical Properties. Luminescence in III-nitrides (B. Monemar ). Structural Properties. X-ray analysis of the texture of heteroepitaxial gallium nitride films (N. Herres et al.). Characterization. Raman spectroscopy of disorder effects in AlxGa1_xN solid solutions (V.Y. Davydov et al.). First Principles Calculations. Lattice dynamics of boron nitride (H.W. Leite Alves et al.). Properties of InGaN. Influence of strain and buffer layer type on In incorporation during GaInN MOVPE (F. Scholz et al.). Quantum Wells and Nanostructures. Optical properties of InGaN quantum wells (S.F. Chichibu et al.). Processing and Contacts. Smooth GaN surfaces by photoinduced electro-chemical etching (T. Rotter et al.). Lasers and LED's. Theoretical optical gain in InGaN quantum wells (T. Uenoyama et al.). Electronic Devices and Photodetectors. Microwave electronics device applications of AIGaN/GaN heterostructures (Q. Chen et al.).ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
||||
