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OverviewThis book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits. Full Product DetailsAuthor: Yue Hao , Jin Feng Zhang , Jin Cheng ZhangPublisher: Taylor & Francis Ltd Imprint: CRC Press Weight: 0.771kg ISBN: 9780367574369ISBN 10: 0367574365 Pages: 392 Publication Date: 30 June 2020 Audience: College/higher education , Professional and scholarly , Postgraduate, Research & Scholarly , Professional & Vocational Format: Paperback Publisher's Status: Active Availability: In Print  This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of ContentsNitride Wide Bandgap Semiconductor Material and Electronic DevicesReviewsAuthor InformationYue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China. Tab Content 6Author Website:Countries AvailableAll regions |
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