Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications

Author:   Peter Capper
Publisher:   Chapman and Hall
Edition:   1997 ed.
Volume:   3
ISBN:  

9780412715600


Pages:   592
Publication Date:   31 October 1997
Format:   Hardback
Availability:   In Print   Availability explained
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Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications


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Overview

Organized into three sections this text aims to give an insight into this area of electronic materials activity. The first section covers the growth of materials from the earliest, though still used, bulk techniques, through to the more recent epitaxial techniques, based on both liquid and gas phases, and includes the recent area of low dimensional solids and the novel concepts which arise from them; the second section discusses the properties of the materials which make them useful for various applications such as optical, transport, doping, defects, diffusion, structural and the interfacial and surface effects; and a devices section which encompasses the major fields of infrared detection and emission, by several device types, and the expanding areas of solar cell production and room temperature detection of X-rays and gamma-rays.

Full Product Details

Author:   Peter Capper
Publisher:   Chapman and Hall
Imprint:   Chapman and Hall
Edition:   1997 ed.
Volume:   3
Dimensions:   Width: 15.50cm , Height: 3.30cm , Length: 23.30cm
Weight:   2.320kg
ISBN:  

9780412715600


ISBN 10:   0412715600
Pages:   592
Publication Date:   31 October 1997
Audience:   College/higher education ,  Professional and scholarly ,  Postgraduate, Research & Scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print   Availability explained
This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us.

Table of Contents

One: Growth Techniques.- 1 Bulk growth techniques.- 2 Liquid phase epitaxy.- 3 Metal-organic vapour phase epitaxy.- 4 Molecular beam epitaxy of HgCdTe.- Two: Materials Characterisation.- 5 Optical properties of MCT.- 6 Transport properties of narrow-gap II-VI compounds.- 7 Intrinsic and extrinsic doping.- 8 Point defects in narrow-gap II-VI compounds.- 9 Diffusion in narrow-gap II-VI compounds.- 10 Surfaces/interfaces of narrow-gap II-VI compounds.- 11 Trends in structural defects in narrow-gap II-VI semiconductors.- 12 Quantum wells and superlattices.- 13 Properties of diluted magnetic semiconductors.- Three: Device Applications.- 14 Photoconductive detectors in HgCdTe and related alloys.- 15 Photovoltaic IR detectors.- 16 Non-equilibrium devices in HgCdTe.- 17 Emission devices.- 18 Photoelectromagnetie, magnetoconcentration and Dember infrared detectors.- 19 Solar cells based on CdTe.- 20 Radiation detectors.

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