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OverviewThe field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on bulk CdTe family substrates these materials are included in this book, although strictly, of course, they are not 'narrow-gap'. This book is intended for readers who are either new to the field or are experienced workers in the field who need a comprehensive and up to date view of this rapidly expanding area. To satisfy the needs of the frrst group each chapter discusses the principles underlying each topic and some of the historical background before bringing the reader the most recent information available. For those currently in the field the book can be used as a collection of useful data, as a guide to the literature and as an overview of topics covering the wide range of work areas. Full Product DetailsAuthor: Peter CapperPublisher: Springer-Verlag New York Inc. Imprint: Springer-Verlag New York Inc. Edition: Softcover reprint of the original 1st ed. 1997 Volume: 3 Dimensions: Width: 15.50cm , Height: 3.20cm , Length: 23.50cm Weight: 0.937kg ISBN: 9781461284215ISBN 10: 146128421 Pages: 592 Publication Date: 19 January 2012 Audience: Professional and scholarly , Professional & Vocational Format: Paperback Publisher's Status: Active Availability: Manufactured on demand We will order this item for you from a manufactured on demand supplier. Table of ContentsOne: Growth Techniques.- 1 Bulk growth techniques.- 2 Liquid phase epitaxy.- 3 Metal-organic vapour phase epitaxy.- 4 Molecular beam epitaxy of HgCdTe.- Two: Materials Characterisation.- 5 Optical properties of MCT.- 6 Transport properties of narrow-gap II-VI compounds.- 7 Intrinsic and extrinsic doping.- 8 Point defects in narrow-gap II-VI compounds.- 9 Diffusion in narrow-gap II-VI compounds.- 10 Surfaces/interfaces of narrow-gap II-VI compounds.- 11 Trends in structural defects in narrow-gap II-VI semiconductors.- 12 Quantum wells and superlattices.- 13 Properties of diluted magnetic semiconductors.- Three: Device Applications.- 14 Photoconductive detectors in HgCdTe and related alloys.- 15 Photovoltaic IR detectors.- 16 Non-equilibrium devices in HgCdTe.- 17 Emission devices.- 18 Photoelectromagnetie, magnetoconcentration and Dember infrared detectors.- 19 Solar cells based on CdTe.- 20 Radiation detectors.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |