Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications

Author:   Peter Capper
Publisher:   Springer-Verlag New York Inc.
Edition:   Softcover reprint of the original 1st ed. 1997
Volume:   3
ISBN:  

9781461284215


Pages:   592
Publication Date:   19 January 2012
Format:   Paperback
Availability:   Manufactured on demand   Availability explained
We will order this item for you from a manufactured on demand supplier.

Our Price $580.77 Quantity:  
Add to Cart

Share |

Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications


Add your own review!

Overview

The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on bulk CdTe­ family substrates these materials are included in this book, although strictly, of course, they are not 'narrow-gap'. This book is intended for readers who are either new to the field or are experienced workers in the field who need a comprehensive and up to date view of this rapidly expanding area. To satisfy the needs of the frrst group each chapter discusses the principles underlying each topic and some of the historical background before bringing the reader the most recent information available. For those currently in the field the book can be used as a collection of useful data, as a guide to the literature and as an overview of topics covering the wide range of work areas.

Full Product Details

Author:   Peter Capper
Publisher:   Springer-Verlag New York Inc.
Imprint:   Springer-Verlag New York Inc.
Edition:   Softcover reprint of the original 1st ed. 1997
Volume:   3
Dimensions:   Width: 15.50cm , Height: 3.20cm , Length: 23.50cm
Weight:   0.937kg
ISBN:  

9781461284215


ISBN 10:   146128421
Pages:   592
Publication Date:   19 January 2012
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand   Availability explained
We will order this item for you from a manufactured on demand supplier.

Table of Contents

One: Growth Techniques.- 1 Bulk growth techniques.- 2 Liquid phase epitaxy.- 3 Metal-organic vapour phase epitaxy.- 4 Molecular beam epitaxy of HgCdTe.- Two: Materials Characterisation.- 5 Optical properties of MCT.- 6 Transport properties of narrow-gap II-VI compounds.- 7 Intrinsic and extrinsic doping.- 8 Point defects in narrow-gap II-VI compounds.- 9 Diffusion in narrow-gap II-VI compounds.- 10 Surfaces/interfaces of narrow-gap II-VI compounds.- 11 Trends in structural defects in narrow-gap II-VI semiconductors.- 12 Quantum wells and superlattices.- 13 Properties of diluted magnetic semiconductors.- Three: Device Applications.- 14 Photoconductive detectors in HgCdTe and related alloys.- 15 Photovoltaic IR detectors.- 16 Non-equilibrium devices in HgCdTe.- 17 Emission devices.- 18 Photoelectromagnetie, magnetoconcentration and Dember infrared detectors.- 19 Solar cells based on CdTe.- 20 Radiation detectors.

Reviews

Author Information

Tab Content 6

Author Website:  

Customer Reviews

Recent Reviews

No review item found!

Add your own review!

Countries Available

All regions
Latest Reading Guide

lgn

al

Shopping Cart
Your cart is empty
Shopping cart
Mailing List