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OverviewWritten from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results Full Product DetailsAuthor: David Esseni (Università degli Studi di Udine, Italy) , Pierpaolo Palestri (Università degli Studi di Udine, Italy) , Luca Selmi (Università degli Studi di Udine, Italy)Publisher: Cambridge University Press Imprint: Cambridge University Press (Virtual Publishing) ISBN: 9780511973857ISBN 10: 0511973853 Publication Date: 05 August 2011 Audience: Professional and scholarly , Professional & Vocational Format: Undefined Publisher's Status: Active Availability: In stock  We have confirmation that this item is in stock with the supplier. It will be ordered in for you and dispatched immediately. Table of Contents1. Introduction; 2. Bulk semiconductors and the semi-classical model; 3. Quantum confined inversion layers; 4. Carrier scattering in silicon MOS transistors; 5. The Boltzmann transport equation; 6. The Monte Carlo method for the Boltzmann transport equation; 7. Simulation of bulk and SOI silicon MOSFETs; 8. MOS transistors with arbitrary crystal orientation; 9. MOS transistors with strained silicon channels; 10. MOS transistors with alternative materials; Appendix A. Mathematical definitions and properties; Appendix B. Integrals and transformations over a finite area A; Appendix C. Calculation of the equi-energy lines with the k-p model; Appendix D. Matrix elements beyond the envelope function approximation; Appendix E. Charge density produced by a perturbation potential.Reviews'In this comprehensive text, physicists and electrical engineers will find a thorough treatment of semiclassical carrier transport in the context of nanoscale MOSFETs. With only a very basic background in mathematics, physics, and electronic devices, the authors lead readers to a state-of-the-art understanding of the advanced transport physics and simulation methods used to describe modern transistors.' Mark Lundstrom, Purdue University 'This is the most pedagogical and comprehensive book in the field of CMOS device physics I have ever seen.' Thomas Skotnicki, STMicroelectronics 'This is a modern and rigorous treatment of transport in advanced CMOS devices. The detailed and complete description of the models and the simulation techniques makes the book fully self sufficient.' Asen Asenov, University of Glasgow 'In this comprehensive text, physicists and electrical engineers will find a thorough treatment of semiclassical carrier transport in the context of nanoscale MOSFETs. With only a very basic background in mathematics, physics, and electronic devices, the authors lead readers to a state-of-the-art understanding of the advanced transport physics and simulation methods used to describe modern transistors.' Mark Lundstrom, Purdue University 'This is the most pedagogical and comprehensive book in the field of CMOS device physics I have ever seen.' Thomas Skotnicki, STMicroelectronics 'This is a modern and rigorous treatment of transport in advanced CMOS devices. The detailed and complete description of the models and the simulation techniques makes the book fully self sufficient.' Asen Asenov, University of Glasgow In this comprehensive text, physicists and electrical engineers will find a thorough treatment of semiclassical carrier transport in the context of nanoscale MOSFETs. With only a very basic background in mathematics, physics, and electronic devices, the authors lead readers to a state-of-the-art understanding of the advanced transport physics and simulation methods used to describe modern transistors. - Mark Lundstrom, Purdue University This is the most pedagogical and comprehensive book in the field of CMOS device physics I have ever seen. - Thomas Skotnicki, STMicroelectronics This is a modern and rigorous treatment of transport in advanced CMOS devices. The detailed and complete description of the models and the simulation techniques makes the book fully self sufficient. - Asen Asenov, University of Glasgow Author InformationDavid Esseni is an Associate Professor of Electronics at the University of Udine, Italy. Pierpaolo Palestri is an Associate Professor of Electronics at the University of Udine, Italy. Luca Selmi is a Professor of Electronics at the University of Udine, Italy. Tab Content 6Author Website:Countries AvailableAll regions |
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